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Texture Development in Thin Nickel Oxide Films

Published online by Cambridge University Press:  15 February 2011

F. Czerwinski and
J.A. Szpunar
F. Czerwinski
Affiliation:
Department of Metallurgical Engineering, McGill University, Montreal, Que., H3A 2A7, Canada
J.A. Szpunar
Affiliation:
Department of Metallurgical Engineering, McGill University, Montreal, Que., H3A 2A7, Canada
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Abstract

X-ray diffraction was used to study the influence of ultra-fine dispersions of CeO2 on the texture development and epitaxial relationships in oxide films, formed at high temperatures. The substrate orientation exerted the essential effect on microstructure and growth rate of oxide films on both pure as well as coated nickel. NiO grown on (100)Ni was polycrystalline with grains randomly oriented. Applying of CeO2 resulted in a marked decrease of the oxide growth rate without significant changes in the texture. The NiO formed on pure (111)Ni exhibited strong (111) texture. During initial stages of oxidation the presence of CeO2 caused the nucleation of randomly oriented oxide. However, the oxide developed during further exposure had the same character as that grown on pure (111)Ni face. X-ray measurements are compared with analysis conducted by TEM and electron microdiffraction. The role of chemically active element in inhibition of diffusion processes during the growth of oxides on both crystal faces is discussed.

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References

REFERENCES

1. Atkinson, A., Taylor, R.I. and Hughes, A.E., Phil. Mag., A 45, 823 (1982).Google Scholar
2. Moon, D.P. and Bennett, M.J., Mater. Sci. Forum, 43, 269 (1989).Google Scholar
3. Whittle, D.P. and Stringer, J., Phil. Trans. R. Soc. Lond., A 295, 309 (1980).Google Scholar
4. Czerwinski, F. and Smeltzer, W.W., in Oxide Films on Metals and Alloys, edited by Dougall, B.R., Alwitt, R.S. and Ramanarayan, T.A. (The Electrochem. Soc., Pennington, NJ, 1992) p. 81.Google Scholar
5. Czerwinski, F. and Smeltzer, W.W., Oxid. Met., 40, 503 (1993).Google Scholar
6. Khoi, N.N., Smeltzer, W.W. and Embury, J.D., J. Electrochem. Soc., 122, 1495 (1975).Google Scholar
7. Herchl, R., Khoi, N.N., Homma, T. and Smeltzer, W.W., Oxid. Met., 4, 35 (1972)Google Scholar
8. Czerwinski, F. and Smeltzer, W.W., in Microscopy of Oxidation, edited by Newcomb, S.B. and Bennett, M.J. (The Institute of Materials, London, 1993) p. 128.Google Scholar
9. Szpunar, J.A., Ahlroos, S. and Tavenier, Ph., J. Mater. Science, 28, 2366 (1993).Google Scholar
10. Czerwinski, F. and Szpunar, J. A., to be published.Google Scholar