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Texture in Sputtered MO Films

Published online by Cambridge University Press:  15 February 2011

O.P. Karpenko,
M. Vill,
S.G. Malhotra,
J.C. Bilello and
S.M. Yalisove
O.P. Karpenko
Affiliation:
Department of Materials Science and Engineering, University of Michigan, 2300 Hay ward Street, Ann Arbor, MI, 48109–2136
M. Vill
Affiliation:
Department of Materials Science and Engineering, University of Michigan, 2300 Hay ward Street, Ann Arbor, MI, 48109–2136
S.G. Malhotra
Affiliation:
Department of Materials Science and Engineering, University of Michigan, 2300 Hay ward Street, Ann Arbor, MI, 48109–2136
J.C. Bilello
Affiliation:
Department of Materials Science and Engineering, University of Michigan, 2300 Hay ward Street, Ann Arbor, MI, 48109–2136
S.M. Yalisove
Affiliation:
Department of Materials Science and Engineering, University of Michigan, 2300 Hay ward Street, Ann Arbor, MI, 48109–2136
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Abstract

The evolution of texture in thin films must be fully understood in order to take advantage of favorable crystallographic orientations in a material for a given application. The development of an out-of-plane texture (preferred crystallographic orientation in the growth direction) and an in-plane texture (preferred crystallographic orientation in the plane of growth) in sputter deposited, thin mo films on Si was studied using transmission electron microscopy and diffraction, and conventional x-ray pole figures. For a range of deposition parameters, a strong (110) out-of-plane texture developed within 1000Å, while a strong in-plane texture did not develop until a thickness of about 1 μm.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 317: Symposium B – Mechanisms of Thin Film Evolution , 1993, 467
Copyright
Copyright © Materials Research Society 1994

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References

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