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Thermal Analysis and Structural Design of Phase Change Random Access Memory

Published online by Cambridge University Press:  01 February 2011

Rong Zhao,
Ler Ming Lim,
Luping Shi,
Hock Koon Lee,
Hongxin Yang and
Tow Chong Chong
Rong Zhao
Affiliation:
zhao_rong@dsi.a-star.edu.sg, Data Storage Institute, Optical Materials & Systems Division, DSI Building, 5 Engineering Drive 1 (Off Kent ridge Crescent, NUS),, Singapore, Singapore, N/A, 117608, Singapore, (65) 6874 8412, (65) 6777 8517
Ler Ming Lim
Affiliation:
lerming@gmail.com, National University of Singapore, Department of Electrical and Computer Engineering, 10 Kent Ridge Crescent,, S119260, ,, N/A, N/A, Singapore
Luping Shi
Affiliation:
SHI_Luping@dsi.a-star.edu.sg, Data Storage Institute, Optical Materials & Systems Division, DSI Building, 5 Engineering Drive 1 (Off Kent ridge Crescent, NUS),, S117608, ,, N/A, N/A, Singapore
Hock Koon Lee
Affiliation:
LEE_Hock_Koon@dsi.a-star.edu.sg, Data Storage Institute, Optical Materials & Systems Division, DSI Building, 5 Engineering Drive 1 (Off Kent ridge Crescent, NUS),, S117608, ,, N/A, N/A, Singapore
Hongxin Yang
Affiliation:
YANG_Hongxin@dsi.a-star.edu.sg, Data Storage Institute, Optical Materials & Systems Division, DSI Building, 5 Engineering Drive 1 (Off Kent ridge Crescent, NUS),, S117608, ,, N/A, N/A, Singapore
Tow Chong Chong
Affiliation:
CHONG_Tow_Chong@dsi.a-star.edu.sg, Data Storage Institute, Optical Materials & Systems Division, DSI Building, 5 Engineering Drive 1 (Off Kent ridge Crescent, NUS),, S117608, ,, N/A, N/A, Singapore
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Abstract

A thermal modeling based on Finite Element Method (FEM) was used to simulate Phase Change Random Access Memory (PCRAM) cells. The factors affecting temperature distribution of a PCRAM cell structure such as geometry, device structure and the properties of the individual materials were investigated. The results of the analysis provided the fundamental design of a novel cell structure which has a better performance and reliability.

Keywords

memorysimulationdevices

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 918: Symposium H – Chalcogenide Alloys for Reconfigurable Electronics , 2006, 0918-H05-02-G06-02
Copyright
Copyright © Materials Research Society 2006

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References

1.ITRS 2003 Google Scholar
2. Ovonyx Technology, “Ovonic Unified Memory,” released from 1999 by Ovonic, Inc., 2956 Waterview Drive, Rochester Hills, M1 48309).Google Scholar
3. Maimon, J., Spall, E., Quinn, R., Schnur, S., “Chalcogenide-based non-volatile memory technology”, Aerospace Conference, 2001, IEEE Proceedings., vol. 5, 10–17 Mar 2001, pp. 2289-2294.Google Scholar
4 Hwang, Y.N., Hong, J.S., Lee, S.H., Ahn, S.J., Jeong, G.T., Koh, G.H., Kim, H.J., Jeong, W.C., Lee, S.Y., Park, J.H., Ryoo, K.C., Horii, H., Ha, Y.H., Yi, J.H., Cho, W.Y., Kim, Y.T., Lee, K.H., Joo, S.H., Park, S.O., Jeong, U.I., Jeong, H.S., Kim, Kinam, “Phase-change chalcogenide nonvolatile RAM completely based on CMOS technology”, VLSI Technology, Systems, and Applications, 2003 International Symposium on, 6-8 Oct. 2003 pp. 29–31.Google Scholar
5 Takaura, N., Terao, M., Kurotsuchi, K., Yamauchi, T., Tonomura, O., Hanaoka, Y., Takemura, R., Osada, K., Kawahara, T., Matsuoka, H., “A GeSbTe Phase-Change Memory Cell Featuring a Tungsten Heater Electrode for Low Power, Highly Stable, and Short-Read-Cycle Operations”, Electron Devices Meeting, 2003. IEDM '03 Tech. Dig. IEEE International, 8-10 Dec. 2003 Pages: 37.2.1–37.2.4.Google Scholar
6 Kang, Dae-Hwan, Ahn, Dong-Ho, Kim, Ki-Bum, Webb, J. F., and Yi, Kyung-Woo, “Onedimensional heat conduction model for an electrical phase change random access memory device with an 8F2 memory cell (F = 0.15 μm)”, J. Appl. Phys. Vol. 94, pp. 3536 (2003).Google Scholar