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Thick Oxide Layers on N and P SiC Wafers by a Depo-Conversion Technique

Published online by Cambridge University Press:  10 February 2011

Q. Zhang,
V. Madangarli,
I. Khlebnikov,
S. Soloviev and
T. S. Sudarshan
Q. Zhang
Affiliation:
Department of Electrical Engineering University of South Carolina, SC 29208, U.S.A Tel: 803–777–7302; Fax: 803–777–8045 Zhang@engr.sc.edu
V. Madangarli
Affiliation:
Department of Electrical Engineering University of South Carolina, SC 29208, U.S.A Tel: 803–777–7302; Fax: 803–777–8045 Zhang@engr.sc.edu
I. Khlebnikov
Affiliation:
Department of Electrical Engineering University of South Carolina, SC 29208, U.S.A Tel: 803–777–7302; Fax: 803–777–8045 Zhang@engr.sc.edu
S. Soloviev
Affiliation:
Department of Electrical Engineering University of South Carolina, SC 29208, U.S.A Tel: 803–777–7302; Fax: 803–777–8045 Zhang@engr.sc.edu
T. S. Sudarshan
Affiliation:
Department of Electrical Engineering University of South Carolina, SC 29208, U.S.A Tel: 803–777–7302; Fax: 803–777–8045 Zhang@engr.sc.edu
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Abstract

The electrical properties of thick oxide layers on n and p-type 6H-SiC obtained by a depoconversion technique are presented. High frequency capacitance-voltage measurements on MOS capacitors with a ∼ 3000 Å thick oxide indicates an effective charge density comparable to that of MOS capacitors with thermal oxide. The breakdown field of the depo-converted oxide obtained using a ramp response technique indicates a good quality oxide with average values in excess of 6 MV/cm on p-type SiC and 9 MV/cm on n-type SiC. The oxide breakdown field was observed to decrease with increase in MOS capacitor diameter.

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References

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