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Third Order Mode Optically Pumped Semiconductor Laser for an Integrated Twin Photon Source in Quantum Optics

Published online by Cambridge University Press:  21 March 2011

N. G. Semaltianos,
A. De Rossi,
V. Berger,
B. Vinter,
E. Chirlias and
V. Ortiz
N. G. Semaltianos
Affiliation:
Thales Research and Technology Domaine de Corbeville 91404 Orsay, FRANCE
A. De Rossi
Affiliation:
Thales Research and Technology Domaine de Corbeville 91404 Orsay, FRANCE
V. Berger
Affiliation:
Thales Research and Technology Domaine de Corbeville 91404 Orsay, FRANCE
B. Vinter
Affiliation:
Thales Research and Technology Domaine de Corbeville 91404 Orsay, FRANCE
E. Chirlias
Affiliation:
Thales Research and Technology Domaine de Corbeville 91404 Orsay, FRANCE
V. Ortiz
Affiliation:
Thales Research and Technology Domaine de Corbeville 91404 Orsay, FRANCE
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Abstract

Lasing action on a third order waveguide mode is demonstrated at room temperature under optical pumping, in a specifically designed quantum well laser structure. The AlGaAs heterostructure involves barriers which ensure that the third order mode has a higher overlap with the single quantum well emitter than the fundamental mode. Third order mode operation of a laser structure opens the way to modal phase matched parametric down conversion inside the semiconductor laser itself. It is a first step towards the realization of semiconductor twin photon laser sources, needed for quantum information experiments.

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