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Three-Dimensional Structure of Helical and Zigzagged Nanowires Using Electron Tomography

Published online by Cambridge University Press:  01 February 2011

Han Sung Kim
Affiliation:
rhymesterkim@empal.com, Korea University, Materials chemistry, Jochiwon, Korea, Republic of
Yoon Myung
Affiliation:
qoouni@korea.ac.kr, Korea University, Materials chemistry, Jochiwon, Korea, Republic of
Chang Hyun Kim
Affiliation:
nanolab@empal.com, Korea University, Materials chemistry, Jochiwon, Korea, Republic of
Seung Yong Bae
Affiliation:
coldsky@empal.com, Samsung Cheil Industry Inc., Chemical Research and Development Center, Uiwang, Korea, Republic of
Jae-Pyoung Ahn
Affiliation:
jpahn@kist.re.kr, Korea Institute of Science and Technology, Advanced Analysis Center, Seoul, Korea, Republic of
Jeunghee Park
Affiliation:
parkjh@korea.ac.kr, Korea University, Materials chemistry, Jochiwon, Korea, Republic of
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Abstract

Electron tomography and high-resolution transmission electron microscopy were used to characterize the unique three-dimensional structures of helical or zigzagged GaN, ZnGa2O4 and Zn2SnO4 nanowires. The helical GaN nanowires adopt a helical structure that consists of six equivalent <0-111> growth directions with the axial [0001] direction. The ZnGa2O4 nanosprings have four equivalent <011> growth directions with the [001] axial direction. The zigzagged Zn2SnO4 nanowires consisted of linked rhombohedrons structure having the side edges matched to the <011> direction, and the [111] axial direction.

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