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Total Reflection X-Ray Fluorescence (TXRF)

Published online by Cambridge University Press:  21 February 2011

R. S. Hockett
R. S. Hockett*
Affiliation:
Charles Evans & Associates, 301 Chesapeake Drive, Redwood City, CA 94063
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Abstract

Total reflection X-Ray Fluorescence (TXRF) is a glancing x-ray analytical technique which is used primarily to measure surface metal contamination on semiconductor substrates. This is a review of Total reflection X-Ray Fluorescence (TXRF) applications for silicon semiconductor processing. In addition, some comments are made about the future of TXRF, and in particular, synchrotron radiation TXRF (SR-TXRF)

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References

1 Iida, A., Sakurai, K., Yoshinaga, A. and Gohshi, Y., Nuclear Instruments and Methods in Physics Research, A246. 736 (1986).Google Scholar
2 Hockett, R.S., Baumann, S.M., and Schemmel, E., Extended Abstracts. Volume 88–2, The Electrochemical Society, Abstract 423, p. 621 (1988); full paper published in Diagnostic Techniques for Semiconductor Materials and Devices, edited by T. J. Shaffner and D. K. Schroder, ECS Proceedings Vol. 88-20, The Electrochemical Society, Pennington, NJ, p. 113 (1988).Google Scholar
3 Huber, A., Rath, H.J., and Eichinger, P., Ibid., Electrochem. Soc, Abstract 422, p. 619 (1989); also published in Diagnostic Techniques for Semiconductor Materials and Devices, edited by T. J. Shaffner and D. K. Schroder, ECS Proceedings Vol. 88-20, The Electrochemical Society, Pennington, NJ, p. 109 (1988).Google Scholar
4 Eichinger, P., Rath, H.J., and Schwenke, H., Semiconductor Fabrication: Technology and Metrology. ASTM STP 990. Gupta, Dinesh C., editor, American Society for Testing and Materials, 305 (1989).Google Scholar
5 Penka, V., and Hub, W., Fresenius Z Anal Chem, 333, 586 (1989).Google Scholar
6 Kolbesen, B.O. and Pamler, W., Ibid., 561.Google Scholar
7 Berneike, W., Knoth, J., Schwenke, H., and Weisbrod, U., Ibid., 524.Google Scholar
8 Penka, V. and Hub, W., Spectrochimica Acta 44B, 483 (1989).Google Scholar
9 Biebl, U., SEMICON Europa Tech. Conf., March 7-9 (1989), Zurich.Google Scholar
10 Hockett, R.S., Proceedings of Mat. Res. Soc. Spr. Meeting, San Diego (1989), April 24-26, 1989.Google Scholar
11 Krusell, W.C. and Golland, D.I., Semiconductor Cleaning Technology/ 1989. Ruzyllo, J. and Novak, R.E., eds., The Electrochemical Society, Inc., Pennington, NJ, Vol. 90–9, p. 23 (1990).Google Scholar
12 Nishihagi, K., Kawabata, A., Taniguchi, T., and Ikeda, S., Ibid., p. 243.Google Scholar
13 Hockett, R.S., Ibid., p. 227.Google Scholar
14 Hockett, R.S. and Katz, W., J. Electrochem. Soc. 136, 3481 (1989).Google Scholar
15 Hockett, R.S., Wilson, R.G., Proceedings of the IEEE SOS/SOI Tech. Conf. October 1989, Stateline, NV. (1989), p. 152.Google Scholar
16 Hockett, R.S., SPIE Vol. 1186 Surface and Interface Analysis of Microelectronic Materials Processing and Growth (1989), p. 10.Google Scholar
17 Hockett, R.S., SEMICON/East 89, Boston (1989), pp. 115–124.Google Scholar
18 Hariri, A. and Hockett, R.S., Semiconductor Intl. (1989) August, pp. 74–78.Google Scholar
19 Canham, L.T., Dyball, M.R., and Barraclough, K.G., J. Appl. Phys. 66. 920 (1989).Google Scholar
20 Hockett, R.S., Defect Control in Semiconductors. Sumino, K., ed., Elsevier Science Publishers B.V. (North-Holland) 1990, p. 1587.Google Scholar
21 Hockett, R.S. and Wilson, R.G., Silicon-on-Insulator Technology and Devices. Schmidt, D.N., ed., Electrochem. Soc. Inc., Pennington, NJ, Vol. 90–6, p. 154 (1990).Google Scholar
22 Hockett, R.S. and Wilson, R.C., Extended Abstracts. Volume 90-1, Electrochem. Soc, Montreal (1990), p. 449, Abs. 301.Google Scholar
23 Hockett, R.S. and Berneike, W., Ibid., p. 699, Abs. 464.Google Scholar
24 Tsuchiya, N., Tanaka, M., Kageyama, M., Kubota, A., and Matsushita, Y., Extended Abstracts on the 22nd (1990 Intl.) Conf. on Solid State Devices and Materials. Sendai, 1990, pp. 1131–1134.Google Scholar
25 Hockett, R.S., and Knowles, J., Mat. Res. Soc. Proc. Vol. 162, The Materials Research Society, Pittsburg, PA, p. 261 (1990).Google Scholar
26 Hockett, R.S., Metz, J., and Tower, J.P., 6th Conf. on Semi- insulating III-V Materials. Toronto, Canada, IOP Publishing Ltd., 1990, p. 281.Google Scholar
27 Hockett, R.S., Proceedings of the State of the Art Program for Compound Semiconductors 13th Symposium Meeting, ECS Vol. 91–1, The Electrochemical Society, Pennington, NJ, pp. 183–190 (1991).Google Scholar
28 Hockett, R.S., Extended Abstracts. Volume 90–2, Electrochem. Soc, Seattle (1990), p. 668, Abs. 457.Google Scholar
29 Streckfu”, N., Frey, T., Zielonka, G., Kroninger, F., Ryzlewicz, C. and Ryssel, H., Fresenius J. Anal. Chem. 343. 765 (1992).Google Scholar
30 Fujino, N., Sumita, S., Murakami, K., Kitagawa, K., Sano, M., and Johnson, R., Automated Integrated Circuits Manufacturing. Akins, V.E. and Harada, H., eds., Electrochem. Soc. Inc., Pennington, NJ, Vol. 91–5, pp. 301–315 (1991).Google Scholar
31 Matsushita, Y. and Tsuchiya, N., Ibid., p. 119.Google Scholar
32 Hockett, R.S., Extended Abstracts. Volume 91–1, Electrochem. Soc, Washington, D.C. (1991) p. 233, Abs. 170.Google Scholar
33 Hockett, R.S., Herman, M.H., Mu, X.C., and Ma, L-J., Mat. Res. Soc. Symp. Vol. 225. The Materials Research Society, p. 329 (1991).Google Scholar
34 Graf, D., Grundner, M., Muhlhoff, L., and Dellith, M., J. Appl. Phys. 69, 7620 (1991).Google Scholar
35 Schuster, M., Spectrochimica Acta 46B, 1341 (1991).Google Scholar
36 Neumann, C. and Eichinger, P., Ibid., p. 1369.Google Scholar
37 Prange, A. and Schwenke, H., Adv. X-ray Anal. 35, Barrett, C. S. et al. , eds. , Plenum Press, New York, pp. 899–923 (1992).Google Scholar
38 Meuris, M., Heyns, M., Kuper, W., Verhaverbeke, S., and Philipossian, A., ULSI Science and Technology/1991. Andrews, J.M. and Celler, G.K., eds., Electrochem. Soc. Inc., Pennington, NJ, Vol. 91–11, 454–463 (1991).Google Scholar
39 Ryoo, K., Jo, K.H., and Kang, C.H., SEMICON/Korea 91, Korea (1991) p. III–53.Google Scholar
40 Hockett, R.S., Ibid., p. III–89.Google Scholar
41 Hockett, R.S., Defects in Silicon II. Bullis, W.M., Gosele, U., and Shimura, F., Electrochem. Soc. Inc., Pennington, NJ, Vol. 91–9, p. 57 (1991).Google Scholar
42 Hockett, R.S., Ikeda, S., and Taniguchi, T., Extended Abstracts. Volume 91–2, Electrochem. Soc, Phoenix (1991) p. 815, Abs. 544.Google Scholar
43 Hockett, R.S., Ibid., p. 818, Abs. 547.Google Scholar
44 Hockett, R.S., Ibid., p. 819, Abs. 548.Google Scholar
45 Hockett, R.S., Ibid., p. 648, Abs. 439; full paper published in ECS Vol. 92-2, Diagnostic Techniques for Semiconductor Materials and Devices, edited by Benton, J. L., Maracas, G. N., and Rai-Choudhury, P., The Electrochemical Society, Pennington, NJ, pp. 132–139 (1992).Google Scholar
46 Oki, I., Biwa, T., Kudo, J., and Ashida, T., Ibid., p. 790, Abs. 529.Google Scholar
47 Hub, W., and Penka, V., Microcontamination 91. Canon Communications, Santa Monica, CA p. 266–279 (1991).Google Scholar
48 Poliak, R., Matthews, R., Gupta, P., Frost, M., and Triplett, B., Ibid., 511-520.Google Scholar
49 Meuris, M., Heyns, M., Verhaverbeke, S., Mertens, P., Heverlee, , and Philipossian, A., Ibid., 658-665.Google Scholar
50 Shimanuki, Y. and Ryuta, J., Symposium on “Advanced Science and Technology of Silicon Materials,” Kona, Hawaii (1991), 293-298.Google Scholar
51 Yoshimi, T., Teramoto, S., Osada, T., and Suga, H., Ibid., pp. 299-303Google Scholar
52 Hockett, R.S. and Metz, J., Ibid., 287-292.Google Scholar
53 Utaka, T., Kojima, S., Kouno, H., and Arai, T., Ibid., pp.283-286.Google Scholar
54 Matsushita, Y., Miyashita, M., Kubota, A., and Tsuchiya, N., Ibid., pp. 276-282.Google Scholar
55 Nishihagi, K., Yamashita, N., Fujino, N., Taniguchi, K., and Ikeda, S., Advances in X-rav Analysis. Vol. 34, Barrett, C.S. et al. , Plenum Press, New York (1991) 81–89.Google Scholar
56 Diebold, A.C., Maillot, P., Gordon, M., Baylis, J., Chacon, J., Witowski, R., J. Vac. Sei. Technol. A10, 2945 (1992).Google Scholar
57 Kondo, H., Ryuta, J., and Morita, E., Jpn. J. Appl. Phys. 31, L11 (1992).Google Scholar
58 Anttila, O.J., Tilli, M.V., Schaekers, M., and Claeys, C.L., J. Electrochem. Soc, 139, 1180 (1992).Google Scholar
59 Shibaya, H., Kondo, H., and Tomizawa, K., Chemical Surface Preparation. Passivation and Cleaning for Semiconductor Growth and Processing Symposium, edited by Nemanich, R. J., Helms, C. R., Hirose, M., and Rubloff, G. W., The Materials Research Society, Pittsburg, PA, Mat. Res. Symp. Proc. Vol. 259, pp. 329–344 (1992).Google Scholar
60 Okuda, H., Ryuta, J., Morita, E., and Shimanuki, Y., Ibid.Google Scholar
61 Verhaverbeke, S., Alay, J., Mertens, P., Meuris, M., Heyns, M., Vandervorst, W., Murrell, M., and Sofield, C., Ibid.Google Scholar
62 Hockett, R.S. and Hymes, D., Ibid., p. 173.Google Scholar
63 Kroninger, F., Faltar, T., Frey, L., Ryzlewicz, C., Steckfu”, N., Zialonka, G., Pfitzner, L., and Ryssel, H., SEMICON Europa 92, Zurich, (1992).Google Scholar
64 Hockett, R.S., Cleaning Technology in Semiconductor Device Manufacturing. Ruzyllo, J. and Novak, R.E., Electrochem. Soc, Inc., Pennington, NJ, Vol. 92–12, 350–357 (1992).Google Scholar
65 Hockett, R.S., Ikeda, S., and Taniguchi, T., Ibid., 324-337.Google Scholar
66 Hockett, R.S., Mu, X.C., and Ma, L-J., Ibid., 358-365.Google Scholar
67 Oki, I., Biwa, T., Kudo, J., and Ashida, T., Ibid., 215-222.Google Scholar
68 Ohtani, K., Ihara, K., and Ohmi, T., Contamination Control and Defect Reduction in Semiconductor Manufacturing I. Schmidt, D.N., Electrochem. Soc. Inc., Pennington, NJ, Vol. 92–21, p. 361 (1992).Google Scholar
69 Hackl, B., Range, K.J., Stallhofer, P. and Fabry, L., J. Electrochem. Soc., 139, 1495 (1992).Google Scholar
70 Gruver, R.A., Gaylord, R.H., Bilyou, B.W., and Albaugh, K.B., 1992 IES Proceedings, Nashville (1992), The Institute of Environmental Sciences, Mount Prospect, Illinios, pp. 460–465 (1992).Google Scholar
71 Mertens, P.W., Meris, M., Verhaverbeke, S., Heyns, M.M., Schnegg, A., Graf, D., and Philipossian, A., Ibid., 475-482.Google Scholar
72 Meuris, M., Heyns, M.M., Mertens, P.W., Verhaverbeke, S., and Philipossian, A., Microcontamination, May 92, Canon Communications, Santa Monica, CA, p. 31.Google Scholar
73 Schwenke, H., Gutschke, R., Knoth, J., and Koek, M., Appl. Phys. A54. 460 (1992).Google Scholar
74 Kato, J. and Maruo, Y., J. Electrochem. Soc. 139, 1756 (1992).Google Scholar
75 Ryuta, J., Yoshimi, T., Kondo, H., Okuda, H., and Shimanuki, Y., Jpn. J. Appl. Phys. 31, 2338 (1992).Google Scholar
76 Hockett, R.S., Extended Abstracts. Volume 92–2, Electrochem. Soc, Pennington, NJ, (1992) p. 496, Abs. 338.Google Scholar
77 Hockett, R.S., Ikeda, S., and Taniguchi, T., Ibid., p. 498, Abs. 340.Google Scholar
78 Hockett, R.S., Ibid., p. 497, Abs. 239.Google Scholar
79 Parks, H.G., Schrimpf, R.D., and Craigin, R., Microcontamination 92. Canon Communications, Santa Monica, CA, pp. 718–728 (1992).Google Scholar
80 Gupta, P., Ibid., pp. 580-587.Google Scholar
81 deLarios, J., Krusell, W., McKean, D., Smolinsky, G., Bhat, S., Doris, B., and Gordon, M., Ibid., pp. 706-717.Google Scholar
82 Ohmi, T., Imaoka, T., Sugiyama, I., and Kezuka, T., J. Electrochem. Soc., 139, 3317 (1992).Google Scholar
83 Hsu, E., Parks, E.G., Craigin, R., Tomooka, S., Ramberg, J.S., and Lowry, R.K., Ibid., 3659.Google Scholar
84 Pirooz, S., Shive, L.W., and Golland, D.L., Extended Abstracts for the First European Ultra Clean Meeting, IMEC, Leuven, Belgium, October 1991.Google Scholar
85 Mertens, P.W., Graf, D., Verhaverbeke, S., Meuris, M., Heyns, M., Schnegg, A., and Philpossian, A., Ibid.Google Scholar
86 Yakushiji, K., Ohkawa, S., Yoshinaga, A., and Harada, J., Jpn. J. Appl. Phys. 32, 1191 (1993).Google Scholar
87 Yakushiji, K. and Ohkawa, S., Advances in X-ray Chem. Anal. Japan 24, 97–111 (1993).Google Scholar
88 Yakushiji, K., Ohkawa, S., and Yoshinaga, A., Ibid., pp. 87-95.Google Scholar
89 Ohmi, T., Imaoka, T., Kezuka, T., Takano, J., and Kogure, M., J. Electrochem. Soc. 140, 811 (1993).Google Scholar
90 Aomi, H., Derouin, F., and Ohmi, T., Contamination Control and Defect Reduction in Semiconductor Manufacturing II. preprint, by Electrochemical Society, ECS Spring Meeting 1993, Honolulu.Google Scholar
91 Hockett, R.S. and Jacobson, D., Extended Abstracts. Volume 93–1, Electrochem. Soc, Honolulu, p. 1289, Abs. 875.Google Scholar
92 Hockett, R.S., Metz, J., Radicatti, F., and Craig, A.C.; Contamination Control and Defect Reduction in Semiconductor Manufacturing II. edited by Novak, R. et al. , ECS Proceedings Vol. 94–3, pp. 132–142 (1994).Google Scholar
93 Yoneshige, K., Parks, H.G., Raghavan, S., and Hiskey, J.B., Ibid.Google Scholar
94 Schmidt, H.F., Meuris, M., Mertens, P.W., Verhaverbeke, S. and, Heyns, M.M., 1993 IES Proceedings. Las Vepas (1993). The Institute of Environmental Sciences, Mount Prospect, Illinios, pp. 238–244 (1993).Google Scholar
95 Verhaverbeke, S., Werkhoven, C., Meuris, M., Schmidt, H.F., Dillenbeck, K., Mertens, P., Heyns, M., and Philipossian, A., Ibid., pp. 423-431.Google Scholar
96 DeRouin, F., Aomi, H., Ohmi, T., Ibid., pp. 460-465.Google Scholar
97 Hockett, R.S., Ibid., pp. 432-459.Google Scholar
98 Calaway, W.F., Coon, S.R., Pellin, M.J., Gruen, D.M., Gordon, M., Diebold, A.C., Maillot, P., Banks, J.C., and Knapp, J.A., submitted to Surface and Interface Analysis (June, 1993).Google Scholar
99 Hockett, R. S., Handbook of Silicon Wafer Cleaning Technology. Kern, Werner, Noyes Publication, Park Ridge, New Jersey, pp. 537–592, 1993.Google Scholar
100 Hockett, R. S., unpublished.Google Scholar
101 Hockett, R. S., Baumann, S., Craig, A., and Radicatti, F., unpublished.Google Scholar
102 Tsuya, H., presented at the 4th TECHNOS TREX Users Workshop, Tokyo, Japan, October 26, 1990.Google Scholar
103 Kniffin, M., Beerling, T. E., and Helms, C., Robert, J. Electrochem. Soc. 139, 1195 (1992).Google Scholar
104 Shimizu, H., Honma, N., Munakata, , and Ota, M., Jpn. J. Appl. Phys 27, 1454 (1988).Google Scholar
105 Ryuta, J., Sakurai, M., Morita, E., and Shimanuki, Y., Abstract 10p- C-4, Extended Abstracts of the 52th Japan Applied Physics Society Meeting, No. 2, p. 667, Autumn 1991 (in Japanese).Google Scholar
106 Metz, J. M., Hockett, R. S., Gill, , Margo, and Tai, Sung, ECS Extended Abstracts Vol. 93-2, Abstract 171, p. 275 (1993).Google Scholar
107 Jastrzebski, L., Milic, O., Dexter, M., Lagowski, J., DeBusk, D., Nauka, K., Witowski, R., Gordon, M., and Persson, E., J. Electrochem. Soc. 140, 1152 (1993).Google Scholar
108 Madden, M. C., Wherry, D. C., Pianetta, P., and Brennan, S., ”Synchrotron Radiation for Measurement of Contaminants on Silicon Surfaces,” Mat. Res. Soc. Symp Proc. Vol. 307, pp. 125–130 (1993).Google Scholar
109 Laderman, S., presentation at U.S. SEMI Yield Enhancement seminar, Mountain View, CA, June 29, 1994 Google Scholar
110 F 1526-94, ASTM, Philadelphia, PA.Google Scholar