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Towards a Novel Broadband Spectrally Dynamic Solid State Light Source

Published online by Cambridge University Press:  01 February 2011

David Nicol,
Shalini Gupta,
Nola Li,
Ali Asghar,
Elton Graugnard,
Christopher Summers and
Ian Ferguson
David Nicol
Affiliation:
dbnicol@ece.gatech.edu, Georgia Institute of Technology, 401 Tenth Street NW, Unit E219, Atlanta, GA, 30318, United States
Shalini Gupta
Affiliation:
gupta@ece.gatech.edu, Georgia Institute of Technology, Electrical and Computer Engineering
Nola Li
Affiliation:
nola@ece.gatech.edu, Georgia Institute of Technology, Electrical and Computer Engineering, United States
Ali Asghar
Affiliation:
ali99@aol.com, EMCORE Corporation
Elton Graugnard
Affiliation:
elton.graugnard@mse.gatech.edu, Georgia Institute of Technology, Material Science Engineering
Christopher Summers
Affiliation:
christopher.summers@mse.gatech.edu, Georgia Institute of Technology, Material Science Engineering
Ian Ferguson
Affiliation:
ianf@ece.gatech.edu, Georgia Institute of Technology, Electrical and Computer Engineering, United States
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Abstract

The developments of two major components of a three terminal dual wavelength LED for excitation of multiple phosphors are described. Such a configuration will be novel Broadband Spectrally Dynamic Light Emitting Diode (BSDLED). First, work towards a functional tunnel junction in the GaN system is discussed. The developments of p+ and n+ GaN layers are specifically discussed in relation to their use in a buried current spreading contact layer. Second, the analysis of several phosphors and their application in a spectrally dynamic source is explored. The response to multiple wavelengths of the phosphors is analyzed to create a light source that can be tuned in “real time” to a wide range of correlated color temperatures.

Keywords

GaNdevices

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 892 , 2005, 0892-FF01-08
Copyright
Copyright © Materials Research Society 2006

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References

REFERENCES

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