Hostname: page-component-7b7567c8c-wxvwp Total loading time: 0 Render date: 2026-11-15T01:49:37.944Z Has data issue: false hasContentIssue false
  • English
  • Français

Towards a Quantitative Description of Pattern-dependent Planarization with Ceria Slurries

Published online by Cambridge University Press:  01 February 2011

Roland Rzehak and
Thomas Vogel
Roland Rzehak
Affiliation:
roland.rzehak@qimonda.com, Qimonda Dresden, P CIW PE, Koenigsbruecker Str. 180, Dresden, 01309, Germany, +493518867982, +493518867010
Thomas Vogel
Affiliation:
thomas.vogel1@freenet.de, Qimonda Dresden, Koenigsbruecker Str. 180, Dresden, 01309, Germany
Get access

Abstract

Slurries with ceria abrasives are nowadays widely used for high-end applications like STI. Concerning the pattern dependence of planarization, such slurries exhibit a much more complex behavior than conventional silica-based slurries. The situation is complicated by the fact that depending on often unknown factors like the manufacture of the ceria abrasives and additionally present additives the observed phenomena are also quite diverse. As a consequence, quantitative models are lacking and predictions of post CMP topography that could be used e.g. to derive design rules or optimize dummy fill are not available.

We here present detailed experimental results on one specific slurry system with ceria abrasives that behaves very different from conventional silica-based slurries. Possible causes for this peculiar behavior are discussed to the extent that a statement about their relevance can be made.

Keywords

CMPsimulationmicroelectronics

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1. Tseng, E., Yi, C., Chen, H. C., “A Mechanical Model for DRAM Dielectric CMP Process”, Proc. CMP-MIC Conf. 1997, p. 258.Google Scholar
2. Stine, B. et al. , “A Closed-Form Analytic Model for ILD Thickness Variation in CMP Processes”, Proc. CMP-MIC Conf. 1997, p. 266; T. Smith et al, “A CMP Model Combining Density and Time Dependencies”, Proc. CMP-MIC Conf. 1999, p. 97.Google Scholar
3. Grillaert, J. et al. , “Modeling Step Height Reduction and Local Removal Rates Based on Pad-Substrate Interactions”, Proc. CMP-MIC Conf. 1998, p. 79; J. Grillaert et al, “Modeling the Influence of Pad Bending on the Planarization Performance During CMP”, MRS Spring Meeting 1999, p. 45.Google Scholar
4. Stine, B. E. et al. , “Rapid Characterization and Modeling of Pattern-Dependent Variation in CMP”, IEEE Trans. Semicond. Manuf. 11, 1998, p. 129 Google Scholar
5. Ouma, D. O. et al. , “Characterization and Modeling of Oxide CMP Using Planarization Length and Pattern Density Concepts”, IEEE Trans. Semicond. Manuf. 15, 2002, p. 232 Google Scholar
6. Evans, David R.: Cerium Oxide Abrasives – Observations and Analysis, MRS Proc. 816 (2004) p. K9.1.1 Google Scholar
7. Lee, S.-I. and Kim, C.-I. and Kim, H. and Kim, J.-H. and Nam, C.-W. et al. .: The Effects of Slurries with Pattern Size and Step Height in Shallow Trench Isolation Chemical Mechanical Polishing, CMPMIC (2000) p. 163 Google Scholar
8. Rzehak, R.: Modeling Pattern Effects in Oxide CMP, MRS Proc, 867 (2005), p. W5.10 Google Scholar
9. Jouty, M. and Rivoire, M. and Detzel, T.: The Effect of Feature Size and Counter Mask on Oxide CMP Removal Rate in STI, CMPMIC (1999) p. 329 Google Scholar
10. Kwon, B.-H. et al. .: The Polishing Characteristics of Ceria-based Slurry and Silica-based Slurry in SRAM Device, CMPMIC (2001) p. 218 Google Scholar
11. Lee, W.-J. and Yoon, B. U. and Hah, S. and Moon, J.-T.: A Planarization Model in CMP in Silicon Oxide Using High Selective CeO2 Slurry, MRS Proc 671 (2001) p. M5.3 Google Scholar
12. Rzehak, R.: Pitch-Dependence in Oxide CMP, CMPMIC, (2006), p. 137 Google Scholar