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Transient Heating with Graphite Heaters for Semiconductor Processing

Published online by Cambridge University Press:  15 February 2011

John C. C. Fan,
B-Y. Tsaur and
M. W. Geis
John C. C. Fan
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology Lexington, Massachusetts 02173
B-Y. Tsaur
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology Lexington, Massachusetts 02173
M. W. Geis
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology Lexington, Massachusetts 02173
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Abstract

Transient heating with graphite heaters has been shown to be very useful in several important semiconductor processing applications. Using stationary and/or movable heaters, we have obtained excellent results in the annealing of ion-implantation damage in Si and GaAs, preparation of epitaxial Ge1−xSix on Si substrates, and recrystallization of Si films on insulators. The advantages of graphite heaters include their ready scalability in area to commercial wafer size and their low capital cost. These heaters are also easily machinable, and their temperature can be rapidly varied. When fully developed, this heating technique should provide an inexpensive and versatile method for commercial processing of many semiconductor materials.

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References

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