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Tunneling Current Through MIS Structures With Ultra-Thin Insulators

Published online by Cambridge University Press:  15 February 2011

H. Fujioka,
H.-J. Wann,
D.-G. Park,
Y.-C. King,
Y.-F. Chyan,
M. Oshima and
C. Hu
H. Fujioka
Affiliation:
Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, Berkeley, CA94720, fujioa@bsim.eecs.berkely.edu
H.-J. Wann
Affiliation:
Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, Berkeley, CA94720, fujioa@bsim.eecs.berkely.edu
D.-G. Park
Affiliation:
Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, Berkeley, CA94720, fujioa@bsim.eecs.berkely.edu
Y.-C. King
Affiliation:
Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, Berkeley, CA94720, fujioa@bsim.eecs.berkely.edu
Y.-F. Chyan
Affiliation:
Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, Berkeley, CA94720, fujioa@bsim.eecs.berkely.edu
M. Oshima
Affiliation:
Department of Applied Chemistry, University of Tokyo, Bunkyo-ku, Japan 113
C. Hu
Affiliation:
Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, Berkeley, CA94720, fujioa@bsim.eecs.berkely.edu
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Abstract

Leakage currents through MIS (Metal Insulator Semiconductor) structures with several ultra-thin (14–30Å) insulators (silicon dioxide, silicon oxynitride, and silicon nitride) have been investigated. The leakage currents through both dioxide and oxynitride films sandwiched between n-type poly-Si gates and n-type substrates can be well fitted by the equation for the electron direct tunneling mechanism using the same effective mass and barrier height. This result indicates that incorporation of a minute amount of nitrogen atoms does not seriously affect the basic electrical properties of the oxide films. Leakage currents through ultra-thin nitride can te also fitted with the equation for the direct tunneling mechanism without assuming any extra conduction mechanisms such as hopping through defects.

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