Hostname: page-component-7b7567c8c-lpg2g Total loading time: 0 Render date: 2026-11-15T18:29:19.489Z Has data issue: false hasContentIssue false
  • English
  • Français

Ultrathin Gate and Capacitor Dielectric Formation Using Single- Wafer Processing

Published online by Cambridge University Press:  21 February 2011

R.P.S. Thakur,
A. Ahmad,
A. Ditali,
A. Martin,
A. Kermani,
C. Galewski,
R. Mcintosh and
K. Legler
A. Martin
Affiliation:
Micron Semiconductor Inc., 2805 E. Columbia Rd., Boise, ID 83706
K. Legler
Affiliation:
AG Associates, CVD Division, Fremont, CA 94539
Get access

Abstract

Various ultrathin gate and capacitor structures were formed in a single wafer, lamp heated, reduced pressure, cold wall CVD reactor. Sequential processes including in-situ rapid thermal cleaning, surface passivation, and dielectric formation for capacitor structures was achieved at reduced pressure using pure ammonia. Three types of dielectric films were fabricated: pure thermal oxide, oxynitride, and silicon nitride. The films were grown using pure dry oxygen, nitrous oxide, and silane/ammonia chemistries, respectively. Excellent uniformity across the wafer was observed for dielectric films of different thicknesses. The RTCVD-based films exhibited improved characteristics for leakage and device drive. The TDDB data indicates that the short and long term reliability of the gate and capacitor dielectric films formed with the singlewafer process was better than that obtained with furnace-grown films. Auger electron spectroscopy and ellipsometry techniques were used to correlate film composition with processing conditions. In this paper we present the growth kinetics, composition, and thickness uniformity data and the electrical results of single-wafer processing.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 303: Symposium G – Rapid Thermal and Integrated Processing II , 1993, 401
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1. Pan, P. and Kermani, A., Rapid Thermal Annealing/Chemical Vapor Deposition and Integrated Processing, edited by Hodul, D., Gelpey, J., Green, M., and Siedel, T. (Mater. Res. Soc. Proc. 146, Pittsburg, PA 1989) p. 51.Google Scholar
2. Sarawat, K., Booth, L., Grossman, D., Khuri-Yakub, B., Lee, Y., Moslehi, M., and Wood, S., Rapid Thermal Processing, edited by Singh, Rajendra (SPIE Microelec. Integ. Processing Conf. Proc. 1189, Santa Clara, CA 1989) p. 2.Google Scholar
3. Rosser, P.J., Moynagh, P.B., Affolter, K.B., SPIE. Rapid Thermal & Related Processing Techniques, edited by Singh, Rajendra and Moslehi, Mehdrad, 1393, 49, (1990).CrossRefGoogle Scholar
4. Holton, W.C. et al. , IEEE Trans., 74 (12), 1646, 1986.Google Scholar
5. Moynagh, P.B., Rosser, P.J., and Calligaro, R.B., Conference Publications UK IT88, 540–543, Swansea, 1988.Google Scholar
6. Kabza, H., and Meister, T.F., presented at the Material Research Society Meeting, San Francisco, CA, Spring 1990.Google Scholar
7. Morita, M., Ohmi, T., Hasegawa, E., Kawakami, M., and Suma, K., Applied Physics. Letters, 55, 6, pp. 562–564, 1989.CrossRefGoogle Scholar
8. Moslehi, M., Shatas, S., Saraswat, K.C., and Meindl, J., IEEE Trans. Electron Devices, 34, 6, pp. 1407–1410, 1987.CrossRefGoogle Scholar
9. Hori, T., Iwasaki, H., and Tsuji, K., IEEE Trans. Electron Devices, 36, 340 (1980).CrossRefGoogle Scholar
10. Hori, T., IEEE Trans. Electron Devices, 37, 2058 (1990).CrossRefGoogle Scholar
11. Hirashita, N., Kinoshita, M., Aikawa, I, and Ajioka, T., Applied Physics. Letters, 56, 5, pp. 451–453, 1990.CrossRefGoogle Scholar
12. Miyake, K., Japan Journal of Applied Physics, 28, 11, pp. 2376–2381, 1989.Google Scholar
13. Mathews, V.K., Thakur, R.P.S., Ditali, A. and Fazan, P., presented at the MRS Fall conference, Boston, MA, 1992.Google Scholar
14. Kermani, A. and Wong, F., Solid State Technology, 42, 41 (1990).Google Scholar
15. Mole, J.L., Physics Of Semiconductor Devices, (Mcgraw Hill, 1964) p. 253.Google Scholar
16. Sze, S.M., Physics Of Semiconductor Devices, 2nd Edition, (Wiley, New York, 1981), p. 525.Google Scholar