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The Vacancy Effect on Thermal Interface Resistance between Aluminum and Silicon by Molecular Dynamics

Published online by Cambridge University Press:  13 February 2015

Yingying Zhang,
Xin Qian,
Zhan Peng and
Nuo Yang
Yingying Zhang
Affiliation:
School of Energy and Power Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, People's Republic of China
Xin Qian
Affiliation:
School of Energy and Power Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, People's Republic of China
Zhan Peng
Affiliation:
School of Energy and Power Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, People's Republic of China
Nuo Yang*
Affiliation:
School of Energy and Power Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, People's Republic of China
*
*Corresponding author: N.Y. (E-mail: nuo@hust.edu.cn and imyangnuo@gmail.com)
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Abstract

Thermal transport across interfaces is an important issue for microelectronics, photonics, and thermoelectric devices and has been studied both experimentally and theoretically in the past. In this paper, thermal interface resistance (1/G) between aluminum and silicon with nanoscale vacancies was calculated using non-equilibrium molecular dynamics (NEMD). Both phonon-phonon coupling and electron-phonon coupling are considered in calculations. The results showed that thermal interface resistance increased largely due to vacancies. The effect of both the size and the type of vacancies is studied and compared. And an obvious difference is found for structures with different type/size vacancies.

Keywords

nanoscalethermal conductivitymetal-insulator transition

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Footnotes

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Y.Z. and X.Q. contributed equally to this work.

References

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