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Vapor HF Etching for Low Temperature Silicon Epitaxy

Published online by Cambridge University Press:  25 February 2011

Christopher P. D'Emic,
Joseph M. Blum,
Susan L. Cohen,
Robert J. Baseman,
Monica Gilbert,
Frank Cardone,
Carol Stanis,
Laura Rothman,
Michael Hill and
Wilbur Krusell
Christopher P. D'Emic
Affiliation:
IBM T.J. Watson Research Center, P.O. Box 218, Yorktown Heights, NY 10598
Joseph M. Blum
Affiliation:
IBM T.J. Watson Research Center, P.O. Box 218, Yorktown Heights, NY 10598
Susan L. Cohen
Affiliation:
IBM T.J. Watson Research Center, P.O. Box 218, Yorktown Heights, NY 10598
Robert J. Baseman
Affiliation:
IBM T.J. Watson Research Center, P.O. Box 218, Yorktown Heights, NY 10598
Monica Gilbert
Affiliation:
IBM T.J. Watson Research Center, P.O. Box 218, Yorktown Heights, NY 10598
Frank Cardone
Affiliation:
IBM T.J. Watson Research Center, P.O. Box 218, Yorktown Heights, NY 10598
Carol Stanis
Affiliation:
IBM T.J. Watson Research Center, P.O. Box 218, Yorktown Heights, NY 10598
Laura Rothman
Affiliation:
IBM T.J. Watson Research Center, P.O. Box 218, Yorktown Heights, NY 10598
Michael Hill
Affiliation:
Tencore Instruments, 2400 Charleston Rd., Mountain View, CA 94043
Wilbur Krusell
Affiliation:
Watkins-Johnson Co., 440 Kings Village Rd., Scotts Valley, CA 95066
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Abstract

We have evaluated the use of HIF vapor cleaning using an Advantage Edge 2000 commercial etcher as a preclean for low temperature UHV/CVD silicon epitaxy (LTE). Surface analysis by contact angle, XPS and Optically Stimulated Electron Emission (OSEE) measurements indicate that vapor HF treated surfaces have higher levels of impurities and are less stable than surfaces dipped in 10:1 diluted HF. Interfacial SIMS measurements and defect analysis using plan-view TEM after epitaxial growth indicate that the vapor treated samples also had higher levels of interfacial oxygen and surface defects. The results indicate that vapor HF precleaning is less effective for LTE than an aqueous HF dip since it provides poorer quality hydrogen passivation of the silicon surface.

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References

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