Hostname: page-component-7b7567c8c-wxvwp Total loading time: 0 Render date: 2026-11-14T01:11:31.039Z Has data issue: false hasContentIssue false
  • English
  • Français

Why are computer simulations of growth useful?

Published online by Cambridge University Press:  10 February 2011

Pablo Jensen,
Laurent Bardotti,
Albert-László Barabási,
Hernán Larralde,
Shlomo Havlin and
H. Eugene Stanley
Pablo Jensen
Affiliation:
Département de Physique des Matériaux, Université Claude Bernard Lyon-i, 69622 Villeurbanne Cedex, France
Laurent Bardotti
Affiliation:
Département de Physique des Matériaux, Université Claude Bernard Lyon-i, 69622 Villeurbanne Cedex, France
Albert-László Barabási
Affiliation:
University of Notre Dame, Department of Physics, Notre Dame, IN 46556, USA
Hernán Larralde
Affiliation:
Instituto de Física, UNAM, Apdo. Postal 139-B, C.P. 62210, Cuernavaca, Mexico
Shlomo Havlin
Affiliation:
Physics Department, Bar Ilan University, Ramat Gan, Israel
H. Eugene Stanley
Affiliation:
Center for Polymer Studies and Department of Physics, Boston University, Boston, MA 02215, USA
Get access

Abstract

We show how computer simulations can give unique information on the growth of nanostructures and thin films. Specifically, they can predict the morphologies and the island size distributions corresponding to different growth mechanisms. This information cannot be obtained from other approaches such as mean-field mathematical theories or scaling analysis. Special attention is given to the effects of small cluster mobility on experimental results.

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

[1] Barabasi, A.-L. and E.Stanley, H., Fractal Concepts in Surface Growth (Cambridge University Press, 1995); M. Lagally (ed), Kinetics of Ordering and Growth at Surfaces (Plenum, New York, 1990); M. Lagally, Physics Today, 24 (1993); S. Das Sarma, J. Vac. Sci. Technol. A 8, 2714 (1990).Google Scholar
[2] These ingredients are those which are indispensable. Of course, in real experiments, other processes (long range interactions between particles, particle evaporation from the surface, surface exchange between adatoms and bulk atoms, etc.) can be present and further complicate the description.Google Scholar
[3] Mo, Y. W., Kleiner, J., Webb, M.B. and Lagally, M.G., Phys. Rev. Lett. 66, 1998 (1991).Google Scholar
[4] Hwang, R. Q., Schröder, J., Günther, C. and Behm, R. J., Phys. Rev. Lett. 67, 3279 (1991); T. Michely, M. Hohage. M. Bott, and G. Comsa, Phys. Rev. Lett. 70, 3943 (1993)Google Scholar
[5] Röder, H., Hahn, E., Brune, H., Bucher, J.-P., and Kern, K., Nature 366, 141 (1993); H. Brune, C. Romainczyk, H. Röder, and K. Kern, Nature 369, 469 (1994); H. Brune, H. Röder, C. Boragno, and K. Kern, Phys. Rev. Lett. 73, 1955 ( 1994)Google Scholar
[6] Tang, L.-H., J. Phys. I France 3, 935 (1993)Google Scholar
[7] Jensen, P., Barabási, A.-L., Larralde, H., Havlin, S., and Stanley, H. E., Nature 368, 22 (1994); Phys. Rev. E 50, 618–621 (1994); Physica A 207, 219–227 (1994); Phys. Rev. B 50, 15316 (1994).Google Scholar
[8] Bartelt, M.C. and Evans, J. W., Phys. Rev. B 46, 12675 (1992);Google Scholar
[9] Bales, G.S. and Chrzan, D.C., Phys. Rev. B 50, 6057 (1994)Google Scholar
[10] Bunde, A. and Havlin, S. (eds.), Fractals and Disordered Systems (Springer-Verlag, Berlin, 1991)Google Scholar
[11] Vicsek, T., Fractal Growth Phenomena, Second Edition (World Scientific, Singapore, 1992).Google Scholar
[12] Villain, J., Pimpinelli, A., Tang, L.-H., and Wolf, D. E., J. Phys. I France 2, 2107 (1992)Google Scholar
[13] Stoyanov, S. and Kaschiev, D., Current Topics in Mat. Science, Ed. E., Kaldis, (North-Holland, 1981)Google Scholar
[14] Venables, J. A., Spiller, G. D. T., and Hanbiicken, M., Rep. Prog. Phys. 47, 399 (1984).Google Scholar
[15] Günther, S., Kopatzi, E., Bartelt, M.C., Evans, J. W. and Behm, R. J., Phys. Rev. Lett. 73, 553 (1994)Google Scholar
[16] Liu, S., Bönig, L. and Metiu, H., Phys. Rev. B 52 2907 (1995)Google Scholar
[17] Bardotti, L., Jensen, P., Treilleux, M., Cabaud, B. and Hoareau, A., Phys. Rev. Lett. 74, 4694 (1995).Google Scholar
[18] Melinon, P. et al. Int. J. of Mod. Phys. B 9, 339–397 (1995)Google Scholar
[19] Bardotti, L. et al. (to be published)Google Scholar
[20] Ratsch, C., Zangwill, A., Smilauer, P., and Vvedensky, D.D., Phys. Rev. Lett. 72, 3194 (1994)Google Scholar
[21] Kern, R., Masson, A. and Métois, J.J., Current Topics in Mat. Science vol.3, Ed. E., Kaldis, (North-Holland, 1979); Surf. Sci. 27, 483 (1971); C. Chapon and C. R. Henry, Surf. Science 106, 152 (1981).Google Scholar
[22] Kellogg, G.L., Phys. Rev. Lett. 73, 1833 (1994) and references therein.Google Scholar
[23] Raeker, T. J. and DePristo, A. E., Surf. Sci. 317, 283 (1994)Google Scholar
[24] Bartelt, M.C., Tringides, M.C. and Evans, J. W., Phys. Rev. B 47, 13891 (1993); J. G. Amar and F. Family, Phys. Rev. Lett. 74, 2066 (1995)Google Scholar
[25] Mulheran, P. A. and Blackman, J. A., Phil. Mag. Lett. 72, 55 (1995)Google Scholar