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Advanced Wet Etch Bulk Micromachining in {100} Silicon Wafers

Published online by Cambridge University Press:  31 January 2011

Prem Pal and
Kazuo Sato
Prem Pal
Affiliation:
prem@mech.nagoya-u.ac.jp, Nagoya University, Micro and Nano Systems Engineering, Nagoya, Japan
Kazuo Sato
Affiliation:
sato@mech.nagoya-u.ac.jp, Nagoya University, Micro and Nano Systems Engineering, Nagoya, Japan
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Abstract

In this work we have developed novel microfabrication processes using wet anisotropic etchants to perform advanced bulk micromachining in {100}Si wafers for the realization of microelectromechanical systems (MEMS) structures with new shapes. The etching is performed in two steps in pure and Triton-X-100 [C14H22O(C2H4O)n, n = 9-10] added 25 wt% tetramethyl ammonium hydroxide (TMAH) solutions. The local oxidation of silicon (LOCOS) is attempted after the first anisotropic etching step in order to protect the exposed silicon. Two types of structures (fixed and freestanding) are fabricated. The fixed structures contain perfectly sharp corners and edges. Thermally grown silicon dioxide (SiO2) is used for the fabrication of freestanding structures. Present research is an approach to fabricate advanced MEMS structures, extending the range of 3D structures fabricated by silicon wet anisotropic etching.

Keywords

microelectro-mechanical (MEMS)Simachining

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