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AlGaN-Based Microwave Transmit and Receive Modules

Published online by Cambridge University Press:  15 March 2011

John C. Zolper
John C. Zolper*
Affiliation:
Office of Naval Research, code 312 Arlington, VA 22217, zolperj@onr.navy.mil
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Abstract

AlGaN High Electron Mobility Transistors (HEMTs) have made great progress for solid state power amplifiers with the demonstration of an X-band power density up to 9.8 W/mm. This high power density is the result of the high current and voltage capability of this material system. Recently, it has also been shown that these devices can achieve low microwave added noise figures (NF = 0.6 dB at 10 GHz) while maintaining a large breakdown voltage (>60 V) and hence a large dynamic range. These results imply that AlGaN HEMTs can be used to perform the active transmit and receive functions in more robust, higher dynamic range modules. In this paper, the progress in AlGaN microwave HEMTs is reviewed and the issues related to AlGaN transmit and receive (T/R) modules are described.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 622: Symposium T – Wide-Bandgap Electronic Devices , 2000, T2.4.1
Copyright
Copyright © Materials Research Society 2000

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References

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