Hostname: page-component-6898cfcb55-cbk24 Total loading time: 0 Render date: 2026-11-11T04:29:59.635Z Has data issue: false hasContentIssue false
  • English
  • Français

AlGaN/GaN multiple quantum wells grown by using atomic layer deposition technique

Published online by Cambridge University Press:  01 February 2011

Ming-Hua Lo,
Zhen-Yu Li,
Shih-Wei Chen,
Jhih-Cang Hong,
Ting-Chang Lu,
Hao-Chung Kuo and
Shing-Chung Wang
Ming-Hua Lo
Affiliation:
minghualo.eo95g@nctu.edu.tw, National Chiao Tung University, Photonics & Institute of Electro-Optical Engineering, No.1001, Ta Hsueh Rd., Hsinchu City 300, Taiwan, R.O.C., Hsinchu, 300, Taiwan, +886-035-712121-56327
Zhen-Yu Li
Affiliation:
lizhenyu@mail.nctu.edu.tw, National Chiao Tung University, Photonics & Institute of Electro-Optical Engineering, No.1001, Ta Hsueh Rd., Hsinchu City 300, Taiwan, R.O.C., Hsinchu, 300, Taiwan
Shih-Wei Chen
Affiliation:
macub86@yahoo.com.tw, National Chiao Tung University, Photonics & Institute of Electro-Optical Engineering, No.1001, Ta Hsueh Rd., Hsinchu City 300, Taiwan, R.O.C., Hsinchu, 300, Taiwan
Jhih-Cang Hong
Affiliation:
dolphone01@gmail.com, National Chiao Tung University, Photonics & Institute of Electro-Optical Engineering, No.1001, Ta Hsueh Rd., Hsinchu City 300, Taiwan, R.O.C., Hsinchu, 300, Taiwan
Ting-Chang Lu
Affiliation:
timtclu@mail.nctu.edu.tw, National Chiao Tung University, Photonics & Institute of Electro-Optical Engineering, No.1001, Ta Hsueh Rd., Hsinchu City 300, Taiwan, R.O.C., Hsinchu, 300, Taiwan
Hao-Chung Kuo
Affiliation:
hckuo@faculty.nctu.edu.tw, National Chiao Tung University, Photonics & Institute of Electro-Optical Engineering, No.1001, Ta Hsueh Rd., Hsinchu City 300, Taiwan, R.O.C., Hsinchu, 300, Taiwan
Shing-Chung Wang
Affiliation:
scwang@mail.nctu.edu.tw, National Chiao Tung University, Photonics & Institute of Electro-Optical Engineering, No.1001, Ta Hsueh Rd., Hsinchu City 300, Taiwan, R.O.C., Hsinchu, 300, Taiwan
Get access

Abstract

In this work, we report on the growth of ultraviolet (UV) AlGaN/GaN multiple quantum wells (MQWs) structure using atomic layer deposition (ALD) technique. The AlGaN/GaN MQW sample grown on the sapphire substrate consisted of three GaN QWs and four AlGaN barriers comprised AlN/GaN superlattices (SLs). The root-mean-square value of the surface morphology was only 0.35 nm observed from the atomic force microscope image and no crack was found on the surface. Both of the high resolution X-ray diffraction curves and transmission electron microscope images showed sharp interfaces between SLs layers and QWs with good periodicity. These results demonstrate that the ALD could be a very useful technique for controlling the crystalline quality and thickness of the III-nitride epilayer.

Keywords

atomic layer depositioncrystal growthtransmission electron microscopy (TEM)

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

[1] Iizuka, Norio, Kaneko, Kei, Suzuki, Nobuo, Asano, Takashi, Noda, Susumu, and Wada, Osamu, Appl. Phys. Lett. 77, 648 (2000)Google Scholar
[2] Henry, Ümit Özgür Everitt, O. He, Lei, and Morkoç, Hadis, Appl. Phys. Lett. 82, 4080 (2003)Google Scholar
[3] Schmidt, T. J. Yang, X. H. Shan, W. Song, J. J. Salvador, A. Kim, W. Ö. Aktas, Botchkarev, A. and Morkoç, H., Appl. Phys. Lett. 68, 1820 (1996)Google Scholar
[4] Han, J. Crawford, M. H. Shul, R. J. Figiel, J. J. Banas, M. and Zhang, L. Song, Y. K. Zhou, H. and Nurmikko, A. V. Appl. Phys. Lett. 73, 1688 (1998)Google Scholar
[5] Joan Redwing, M. David Loeber, A. S. Anderson, Neal G. Tischler, Michael A., and Flynn, Jeffrey S., Appl. Phys. Lett. 69, 1 (1996)Google Scholar
[6] Sun, Greg, Soref, Richard A. and Khurgin, Jacob B., Superlattices Microstruct. 37, 107 (2005)Google Scholar
[7] Takano, Takayoshi, Narita, Yoshinobu, Horiuchi, Akihiko, and Kawanishi, Hideo, Appl. Phys. Lett. 84, 3567 (2004)Google Scholar
[8] Adivarahan, V. Sun, W. H. Chitnis, A. Shatalov, M. Wu, S. Maruska, H. P. and Khan, M. Asif, Appl. Phys. Lett. 85, 2175 (2004)Google Scholar
[9] Kawakami, Y. Shen, X.Q., Piao, G. Shimizu, M. Nakanishi, H. and Okumura, H. J. Crystal Growth 300, 168 (2007)Google Scholar
[10] Kawakami, Y. Nakajima, A. Shen, X. Q. Piao, G. Shimizu, M. and Okumura, H. Appl. Phys. Lett. 90, 242112 (2007)Google Scholar
[11] Tokunaga, H. Ubukata, A. Yano, Y. Yamaguchi, A. Akutsu, N. Yamasaki, T. and Matsumoto, K. J. Cryst. Growth. 272, 348 (2004)Google Scholar
[12] Park, Y S, Park, C M, Lee, S J, Im, Hyunsik, Kang, T W, Oh, Jae-Eung, Kim, Chang Soo, and Noh, Sam Kyu, Semicond. Sci. Technol. 20, 775 (2005)Google Scholar
[13] Huang, G. S. Lu, T. C. Yao, H. H. Kuo, H. C. Wang, S. C. Lin, Chih-Wei, and Chang, Li, Appl. Phys. Lett. 88, 061904 (2006)Google Scholar
[14] Torabi, A. Hoke, W. E. Mosca, J. J. Siddiqui, J. J. Hallock, R. B. and Kennedy, T. D. J. Vac. Sci. Technol. B 23, 1194 (2005)Google Scholar
[15] Knall, J. Romano, L. T. Biegelsen, D. K. Bringans, R. D. Chui, H. C. Harris, J. S. Jr., Treat, D. W. and Bour, D. P. J. Appl. Phys. 76, 2697 (1994)Google Scholar
[16] Smith, M. Lin, J. Y. Jiang, H. X. Salvador, A. Botchkarev, A. Kim, W. and Morkoc, H. Appl. Phys. Lett. 69, 2453 (1996)Google Scholar