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Aluminum and boron diffusion in 4H-SiC

Published online by Cambridge University Press:  11 February 2011

M. K. Linnarsson,
M. S. Janson,
A. Schöner and
B. G. Svensson
M. K. Linnarsson
Affiliation:
Royal Institute of Technology, Solid State Electronics, P.O. Box E229, SE-164 40 Kista-Stockholm, Sweden
M. S. Janson
Affiliation:
Royal Institute of Technology, Solid State Electronics, P.O. Box E229, SE-164 40 Kista-Stockholm, Sweden
A. Schöner
Affiliation:
ACREO AB, P.O. Box E236, SE-164 40 Kista-Stockholm, Sweden
B. G. Svensson
Affiliation:
Royal Institute of Technology, Solid State Electronics, P.O. Box E229, SE-164 40 Kista-Stockholm, SwedenUniversity of Oslo, Department of Physics, Physical Electronics P.B. 1048 Blindern, N-0316 Oslo, Norway
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Abstract

A brief survey is given of some recent result of boron diffusion in low doped n-type (intrinsic) and p-type 4H-SiC. Aluminum diffusion and solubility limit in 4H-SiC are also discussed. Ion implantation of boron has been performed in epitaxial material to form a diffusion source but also epitaxial 4H-SiC structures, with heavily boron or aluminum doped layers prepared by vapor phase epitaxy have been studied. Heat treatments have been made at temperatures ranging from 1100 to 2050°C for 5 minutes up to 64 h. Secondary ion mass spectrometry has been utilized for analysis. For boron diffusion in acceptor doped 4H-SiC, 4×1019 Al atoms/cm3, an activation energy of 5.3 eV has been determined and a strong dependence on Al content for the diffusion coefficient is revealed. Transient enhanced diffusion of ion-implanted boron in intrinsic 4H-SiC samples is discussed. Solubility limits of ∼1×1020 Al/cm3 (1700°C) and <1×1020 B/cm3 (1900°C) have been deduced.

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References

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