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Aluminum Gate Metallization for AMLCDs

Published online by Cambridge University Press:  10 February 2011

Joo-Han Kim,
Jerzy Kanicki and
Willem den Boer
Joo-Han Kim
Affiliation:
Center for Display Technology and Manufacturing, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48105
Jerzy Kanicki
Affiliation:
Center for Display Technology and Manufacturing, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48105
Willem den Boer
Affiliation:
Center for Display Technology and Manufacturing, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48105OIS Inc., 47050 Five Mile Road Northville, MI 48167
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Abstract

Aluminum metallization incorporating the anodic aluminum oxide has been optimized for high-performance amorphous silicon thin film transistors (a-Si:H TFTs). For such a device, the off-current is less than the picoampere and the ON-OFF current ratio is ∼2×107, the field effective mobility is about 1.25 cm /Vsec in the linear region and the subthreshold swing is about 0.38 V/decade. These electrical performances are acceptable for high-definition AMLCDs.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 471: Symposium G – Flat Panel Display Materials III , 1997, 111
Copyright
Copyright © Materials Research Society 1997

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References

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