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Aluminum Thermo Compression Bonding Characterization

Published online by Cambridge University Press:  31 January 2011

Erkan Cakmak,
Viorel Dragoi,
Eric Pabo,
Thorsten Matthias and
T. L. Alford
Erkan Cakmak
Affiliation:
E.Cakmak@EVGroup.com, EV Group, Technology, Tempe, Arizona, United States
Viorel Dragoi
Affiliation:
v.dragoi@evgroup.com, EV Group, Business Unit for Technology Development, St. Florian am Inn, Austria
Eric Pabo
Affiliation:
E.Pabo@EVGroup.com, EV Group, Technology, Tempe, Arizona, United States
Thorsten Matthias
Affiliation:
T.Matthias@EVGroup.com, EV Group, Technology, Tempe, Arizona, United States
T. L. Alford
Affiliation:
TA@asu.edu, Arizona State University, 1711 S Rural Rd, ERC 252, Tempe, 85281, United States
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Abstract

Wafer level bonding is an important technology for the manufacturing of numerous Microelectromechanical Systems. In this work the aluminum thermo-compression wafer bonding is characterized. The effects and significance of various bond process parameters and surface treatment methods are reported on the final bond interfaces integrity and strength. Experimental variables include the bonding temperature, bonding time, and bonding atmosphere (forming gas and inert gas). Bonded wafer samples were investigated with scanning acoustic microscopy, scanning electron microscopy, and four point bending test. Interfacial adhesion energy and bond quality were found to be positively correlated with bonding temperature. A bonding temperature of 500 °C or greater is necessary to obtain bond strengths of 8-10 J/m2.

Keywords

bondingAldiffusion

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References

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