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Amorphous Phase Formation and Recrystallization in Ion-Implanted Silicides

Published online by Cambridge University Press:  25 February 2011

C.A. Hewett,
I. Suni,
S.S. Lau,
L.S. Hung and
D.M. Scott
C.A. Hewett
Affiliation:
University of California at San Diego, La Jolla, CA 92093.
I. Suni
Affiliation:
Caltech, Pasadena, CA 91125.
S.S. Lau
Affiliation:
University of California at San Diego, La Jolla, CA 92093.
L.S. Hung
Affiliation:
Cornell University, NY 14853.
D.M. Scott
Affiliation:
University of California at San Diego, La Jolla, CA 92093.
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Abstract

Ion implantation induced phase transformations and recrystallization during post-annealing in CoSi2, CrSi2, and Pd2Si are studied. All three silicides are found to reorder at about 1/3 the melting point of the silicide. We speculate that ion-implanted silicides recrystallize by the same mechanism and that amorphous phases produced by implantation are unstable rather than metastable.

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References

REFERENCES

[1] Nicolet, M.-A. and Lau, S. S., “Formation and Characterization of Transition Metal Silicides”, in VLSI Electronics: Microstructure Science, Norman Einspruch, Series Editor, Vol. 6, Materials and Process Characterization, Graydon Larrabee, Guest Editor, Academic Press, 1983.Google Scholar
[2] Lau, S. S., Chu, W. K., Mayer, J. W. and Tu, K. N., Thin Solid Films, 23, 205 (1974).Google Scholar
[3] Christian, J. W., The Theory of Transformations in Metals and Alloys, Part 1, Equilibrium and General Kinetic Theory, 2nd ed., Pergamon Press, Oxford, 1965, Chapter 12.Google Scholar
[4] Ishiwara, H., Hikosaka, K. and Furukawa, S., Appl. Phys. Lett, 32, 23 (1978)Google Scholar
[5] Maenpaa, M., Hung, L. S., Nicolet, M.A., Sadana, D. K. and Lau, S. S., Thin Solid Films, 87, 277, (1982).Google Scholar
[6] Maenpaa, M., Hung, L. S., Tsaur, B. Y., Mayer, J. W., Nicolet, M.-A., Lau, S. S., Sadana, D. K. and Tseng, W. F., J. Elect. Mat. 11, 289 (1982).Google Scholar
[7] Lau, S. S. and van der Weg, W. F., “Solid Phase Epitaxy”, in Thin Films-Interdiffusion and Reactions, Poate, J. M., Tu, K. N. and Mayer, J. W., Editors. John Wiley & Sons, Inc., New York, 1978.Google Scholar
[8] Liu, B. X., Johnson, W. L., Nicolet, M.-A. and Lau, S. S., Appl. Phys. Lett. 42, 45 (1983).Google Scholar
[9] Goltz, G., Fernandez, R., Nicolet, M.-A. and Sadana, D. K., in Metastable Materials Formalion by Ion Implantation, Picraux, S. T. and Choyke, W. J., Eds., (North-Holland, N. Y. 1982), MRS Symposia Proceedings Vol. 7, p. 227.Google Scholar
[10] Hung, L. S., Nastasi, M., Gyulai, J. and Mayer, J. W., Appl. Phys. Lett., 42, 672 (1983).Google Scholar
[11] Tsaur, B. Y. and Anderson, C.H. Jr., J. Appl. Phys. 53, 940 (1982).Google Scholar
[12] Mader, S., J. Vac. Sci. Technol. 2, 35 (1965).Google Scholar
[13] Wiley, J. D., Perepezko, J. H., Nordman, J. E. and Guo, Kang-Jin, IEEE Trans. Ind. Electron., 29, 154 (1982).Google Scholar
[14] Liu, B. X., Johnson, W. L., Nicolet, M.-A. and Lau, S. S., Nucl. Instr. and Meth., 209/210, 229 (1983).Google Scholar