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Amorphous Semiconductor Sample Preparation For Transmission Exafs Measurements

Published online by Cambridge University Press:  10 February 2011

M. C. Ridgway,
C. J. Glover,
H. H Tan,
A. Clark,
F. Karouta,
G. J Foran,
T. W. Lee,
Y. Moon,
E. Yoon and
J. L. Hansen
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M. C. Ridgway
Affiliation:
Department of Electronic Materials Engineering, Australian National University, Canberra, Australia
C. J. Glover
Affiliation:
Department of Electronic Materials Engineering, Australian National University, Canberra, Australia
H. H Tan
Affiliation:
Department of Electronic Materials Engineering, Australian National University, Canberra, Australia
A. Clark
Affiliation:
Department of Electronic Materials Engineering, Australian National University, Canberra, Australia
F. Karouta
Affiliation:
Department of Electronic Materials Engineering, Australian National University, Canberra, Australia
G. J Foran
Affiliation:
Australian Nuclear Science and Technology Organisation, Menai, Australia
T. W. Lee
Affiliation:
School of Matertials Science and Engineering, Seoul National University, Seoul, Korea
Y. Moon
Affiliation:
School of Matertials Science and Engineering, Seoul National University, Seoul, Korea
E. Yoon
Affiliation:
School of Matertials Science and Engineering, Seoul National University, Seoul, Korea
J. L. Hansen
Affiliation:
Institute of Physics and Astronomy, Aarhus University, Aarhus, Denmark
A. Nylandsted-Larsen
Affiliation:
Institute of Physics and Astronomy, Aarhus University, Aarhus, Denmark
C. Clerc
Affiliation:
Centre de Spectrometrie Nucleaire et de Spectrometrie de Masse, Centre National Recherche Scientifique, Orsay, France
J. Chaumont
Affiliation:
Centre de Spectrometrie Nucleaire et de Spectrometrie de Masse, Centre National Recherche Scientifique, Orsay, France
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Abstract

A novel methodology has been developed for the preparation of amorphous semiconductor samples for use in transmission extended x-ray absorption fine structure (EXAFS) measurements. Epitaxial heterostructures were fabricated by metal organic chemical vapour deposition (group III-Vs) or molecular beam epitaxy (group IVs). An epitaxial layer of ∼2 μm thickness was separated from the underlying substrate by selective chemical etching of an intermediate sacrificial layer. Ion implantation was utilised to amorphise the epitaxial layer either before or after selective chemical etching. The resulting samples were both stoichiometric and homogeneous in contrast to those produced by conventional techniques. The fabrication of amorphous GaAs, InP, In0.53Ga0.47As and SixGe1-x samples is described. Furthermore, EXAFS measurements comparing both fluorescence and transmission detection, and crystalline and amorphised GaAs, are shown.

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References

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