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Amorphous Si:H Linear Image Sensor Operated by a-Si:H TFT Array

Published online by Cambridge University Press:  21 February 2011

F. Okumura and
S. Kaneko
F. Okumura
Affiliation:
Microelectronics Research Laboratories, NEC Corporation Miyamae-ku, Kawasaki 213, Japan
S. Kaneko
Affiliation:
Microelectronics Research Laboratories, NEC Corporation Miyamae-ku, Kawasaki 213, Japan
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Abstract

An amorphous Si:H linear image sensor operated by a-Si:H TFT array has been proposed. This sensor consists of photodiode array, TFT array, matrix circuit, charge transfer capacitor, and external circuit. Mobility for TFT is 0.6 cm2/V.s and 5 μsec/bit read out time was obtained in the conventional matrix mode scanning. Moreover, a novel driving method is applied in order to improve the effective operation speed and an investigation for TFT noise was performed. Experimental data confirm the validity of the concept.

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References

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