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Amorphous Silicon Based Particle Detectors

Published online by Cambridge University Press:  27 June 2011

N. Wyrsch
Affiliation:
Ecole Polytechnique Fédérale de Lausanne (EPFL), Institute of Microengineering (IMT)
A. Franco
Affiliation:
Ecole Polytechnique Fédérale de Lausanne (EPFL), Institute of Microengineering (IMT)
Y. Riesen
Affiliation:
Ecole Polytechnique Fédérale de Lausanne (EPFL), Institute of Microengineering (IMT)
M. Despeisse
Affiliation:
Ecole Polytechnique Fédérale de Lausanne (EPFL), Institute of Microengineering (IMT)
S. Dunand
Affiliation:
Ecole Polytechnique Fédérale de Lausanne (EPFL), Institute of Microengineering (IMT)
F. Powolny
Affiliation:
Photovoltaics and thin film electronics laboratory, Breguet 2, 2000 Neuchâtel, Switzerland. CERN, CERN Meyrin, 1211 Genève 23, Switzerland.
P. Jarron
Affiliation:
Photovoltaics and thin film electronics laboratory, Breguet 2, 2000 Neuchâtel, Switzerland. CERN, CERN Meyrin, 1211 Genève 23, Switzerland.
C. Ballif
Affiliation:
Ecole Polytechnique Fédérale de Lausanne (EPFL), Institute of Microengineering (IMT)
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Abstract

Radiation hard monolithic particle sensors can be fabricated by a vertical integration of amorphous silicon particle sensors on top of CMOS readout chip. Two types of such particle sensors are presented here using either thick diodes or microchannel plates. The first type based on amorphous silicon diodes exhibits high spatial resolution due to the short lateral carrier collection. Combination of an amorphous silicon thick diode with microstrip detector geometries permits to achieve micrometer spatial resolution beneficial for high accuracy beam positioning. Microchannel plates based on amorphous silicon were successfully fabricated and multiplication of electrons was observed. This material may solve some of the problems related to conventional microchannel devices. Issues, potential and limits of these detectors are presented and discussed.

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