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Amorphous Silicon Sensor Arrays for Radiation Imaging

Published online by Cambridge University Press:  25 February 2011

R. A. Street
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
S. Nelson
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
L. Antonuk
Affiliation:
Department of Radiation Oncology, University of Michigan, Ann Arbor, MI 48109
V. Perez Mendez
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, CA 94720.
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Abstract

Large two-dimensional a-Si:H imaging arrays have applications in imaging of X-ray, gamma-ray and charged particle fluxes. Radiation imaging using a-Si:H p i n sensors together with a phosphor to transform the radiation into visible light is described, and some examples of images are shown. These arrays are very efficient in imaging large area diffuse sources, and the a-Si:H sensors have little radiation damage. The main limitation to the sensitivity of the array is the leakage current of the sensors, which is a source of noise and limits the integration time of the arrays. The contributions to the leakage current from bulk thermal generation and contact injection are discussed

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Type
Research Article
Copyright
Copyright © Materials Research Society 1990

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