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Amorphous Silicon-Carbide Multilayered Visible-Light Emitting Diode

Published online by Cambridge University Press:  26 February 2011

Dusit Kruangam,
Masahiro Deguchi,
Yutaka Hattori,
Toshihiko Toyama,
Hiroaki Okamoto and
Yoshihiro Hamakawa
Dusit Kruangam
Affiliation:
Faculty of Engineering Science, Osaka University, Toyonaka, Osaka, Japan 560.
Masahiro Deguchi
Affiliation:
Faculty of Engineering Science, Osaka University, Toyonaka, Osaka, Japan 560.
Yutaka Hattori
Affiliation:
Faculty of Engineering Science, Osaka University, Toyonaka, Osaka, Japan 560.
Toshihiko Toyama
Affiliation:
Faculty of Engineering Science, Osaka University, Toyonaka, Osaka, Japan 560.
Hiroaki Okamoto
Affiliation:
Faculty of Engineering Science, Osaka University, Toyonaka, Osaka, Japan 560.
Yoshihiro Hamakawa
Affiliation:
Faculty of Engineering Science, Osaka University, Toyonaka, Osaka, Japan 560.
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Abstract

A series of systematic trials to improve the light emission efficiency has been made on thin film visible a-SiC LEDs. A wide variety of the approaches, such as a superlattice structure, p-i-n/p-i-n tandem structure, an efficient injection electrode with a wide-gap layer etc., have been done. From the results, two practically available new technologies for bright LEDs have been developed, that is; a) a hot carrier injection structure by inserting a highly- resistive layer between p-and i- or i- and n-layers and b) a wide-gap highly-conductive p-type injector layer prepared by ECR (Electron Cyclotron Resonance) CVD deposition. With these trials, the brightness of yellow LEDs have been increased by more than one order of magnitude to be about 5cd/m2

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References

1. For example: Japan Annual Reviews in Electronics, Computers & Telecommunications, Amorphous Semiconductor Technologies & Devices (JARECT) 16, edited by Hamakawa, Y. (Ohm-Sha & North-Holland, 1984).Google Scholar
2. Kruangam, D., Endo, T., Deguchi, M., Guang-Pu, W., Okamoto, H. and Hamakawa, Y., OPTOELECTRONICS -Devices and Technologies (Mita Press) vol 1,No.1, 67 (1986).Google Scholar
3. Kruangam, D., Deguchi, M., Endo, T., Guang-Pu, W., Okamoto, H. and Hamakawa, Y., Extended Abstract of the 18th (1986 International ) Con. Solid State Devices and Materials, Tokyo, 683 (1986).Google Scholar
4. Sze, S.M., Physics of Semiconductor Devices, 2nd ed. (John Wiley & Sons, New York, 1981),p.402.Google Scholar
5. Hattori, Y., Kruangam, D., Katoh, K., Nitta, Y., Okamoto, H. and Hamakawa, Y., 19th IEEE Photovoltaic Specialists Conf., New Orleans, U.S.A., May, 1987.Google Scholar
6. Lim, K., Konagal, M. and Takahashi, K., Jpn. J. Appl. Phys, 21, L473 (1982).Google Scholar