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Anomalous Behavior in Spin Dependent Tunnel Junctions

Published online by Cambridge University Press:  15 February 2011

C. L. Platt,
B. Dieny and
A.E. Berkowitz
C. L. Platt
Affiliation:
Dept. of Physics and Center for Magnetic Recording Research, University of California, San Diego, La Jolla CA 92093–0401.
B. Dieny
Affiliation:
CEA/Département de Recherche Fondamentale sur la Matière Condensée, SP2M/NM, 38054 Grenoble Cedex 9, France.
A.E. Berkowitz
Affiliation:
Dept. of Physics and Center for Magnetic Recording Research, University of California, San Diego, La Jolla CA 92093–0401.
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Abstract

Spin dependent tunneling has been investigated in tunnel junctions composed of a variety of materials. The best results thus far have been with either HfO2 or MgO as the barrier layer using CoFe, Fe, or Co as the magnetic electrodes. The maximum magnetoresistive (MR) response of these junctions has been at low temperatures on the order of 30% in HfO2 and 20% in MgO. We have also observed a variety of anomalous behavior in some of our tunnel junctions at low temperature. These include MR effects dependent on the angle of orientation of the tunnel junction in the applied magnetic field, transition fields greater than lOkOe, and negative MR effects on the order of 2%.

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References

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