Hostname: page-component-7b7567c8c-tnzcf Total loading time: 0 Render date: 2026-11-15T00:58:48.317Z Has data issue: false hasContentIssue false
  • English
  • Français

Application of Advanced Microstructural and Microchemical Microscopy Techniques to Chalcopyrite Solar Cells.

Published online by Cambridge University Press:  01 February 2011

Changhui Lei,
Chun-Ming Li,
Angus Rockett,
I. M. Robertson and
W. Shafarman
Changhui Lei
Affiliation:
Department of Materials Science and Engineering, University of Illinois, Urbana IL 61801
Chun-Ming Li
Affiliation:
Department of Materials Science and Engineering, University of Illinois, Urbana IL 61801
Angus Rockett
Affiliation:
Department of Materials Science and Engineering, University of Illinois, Urbana IL 61801
I. M. Robertson
Affiliation:
Department of Materials Science and Engineering, University of Illinois, Urbana IL 61801
W. Shafarman
Affiliation:
Department of Materials Science and Engineering, University of Illinois, Urbana IL 61801
Get access

Abstract

Analytical TEM techniques have been used to characterize the structure and chemistry of chalcopyrite solar cell devices produced by elemental evaporation using a bi-layer process at Ts=400°C and Ts=550°C. Dislocations, stacking faults, twins and voids exist in both materials but at a reduced density at the higher deposition temperature. The higher processing temperature also improved the density and structure of the grain boundaries and created a less rough surface. The CdS layer coats the surface conformally, although the roughness impacts the structure. CdS fills the grooves in the surface and infiltrates lower density grain boundaries to significant depths. The chemistry of the grain boundaries does not appear to be significantly impacted by the presence of the Cd and S.

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

1 Ramanathan, K., Contreras, M.A., Perkins, C.L., Asher, S., Hasoon, F.S., Keane, J., Young, D., Romero, M., Metzger, W., Noufi, R., Ward, J., and Duda, A., Progress in Photovoltaics: Research and Applications,11: p. 225 (2003).Google Scholar
2 Williams, D.B. and Carter, C.B., Transmission eletron microscopy. 1996: Plenum Press, New York.Google Scholar
3 Pennycook, S.J., Yan, Y., Norman, A., Zhang, Y., Al-Jassim, M., Mascarenhas, A., Ahrenkiel, S.P., Chisholm, M.F., Duscher, G., and Pantelides, S.T.: p. 235. (2000).Google Scholar
4 Pennycook, S.J. and Jesson, D.E., Ultramicroscopy,37: p. 14 (1991).Google Scholar
5 Nellist, P.D. and Pennycook, S.J., Ultramicroscopy,78: p. 111 (1999).Google Scholar
6 Blelocha, A. and Lupinib, A., Materials Today,7: p. 42 (2004).Google Scholar
7 Hetherington, C., Materials Today,7: p. 50 (2004).Google Scholar
8 Nellist, P.D., Chisholm, M.F., Dellby, N., Krivanek, O.L., Murfitt, M.F., Szilagyi, Z.S., Lupini, A.R., Borisevich, A., Jr, W.H.S., and Pennycook, S.J., Science,305: p. 1741 (2004).Google Scholar
9 Voyles, P.M., Muller, D.A., Grazul, J.L., Citrin, P.H., and Gossmann, H.J.L., Nature,416: p. 826 (2002).Google Scholar
10 Lee, T.C. and Silcox, J.. Electron beam irradiated effects of SiO2 in STEM. 1995: Materials Research Society, Pittsburgh, PA, USA. Google Scholar
11 Mkhoyan, K.A. and Silcox, J., Applied Physics Letters,82: p. 859 (2003).Google Scholar
12 Yu, Z., Batson, P.E., and Silcox, J., Ultramicroscopy,96: p. 275 (2003).Google Scholar
13 Shafarman, W.N. and Zhu, J., Thin Solid Films,361-362: p. 473–477. (2000).Google Scholar
14 Shafarman, W.N. and Zhu, J.. Effect of Grain Size, Morphology and Deposition Temperature on Cu(InGa)Se2 Solar Cells. in Proc. 2001 MRS Spring Meeting. 2001.Google Scholar