Hostname: page-component-7b7567c8c-7pwfn Total loading time: 0 Render date: 2026-11-14T05:13:24.319Z Has data issue: false hasContentIssue false
  • English
  • Français

Application of Polysilicon in Advanced IC - Technologies

Published online by Cambridge University Press:  21 February 2011

Herbert Kabza,
Thomas F. Meister and
Hans Schaber
Herbert Kabza
Affiliation:
Siemens AG, Corporate Research and Development, Otto-Hahn-Ring 6, D 8000 Minchen 83, Federal Republic of Germany
Thomas F. Meister
Affiliation:
Siemens AG, Corporate Research and Development, Otto-Hahn-Ring 6, D 8000 Minchen 83, Federal Republic of Germany
Hans Schaber
Affiliation:
Siemens AG, Semiconductor Division, Otto-Hahn-Ring 6, D 8000 München 83, Federal Republic of Germany
Get access

Abstract

The progress in IC technology is unthinkable without the extensive use of polysilicon for a wide variety of purposes. These range from simple passive components like resistors and contacts through more complex structures such as recrystallized layers for SOI and 3D techniques, poly-Si filled isolation trenches and electrodes of DRAM capacitors to active device applications, i.e. MOS gates and poly-Si emitters in bipolar transistors. As silicide or in combination with such polysilicon allows practical local interconnects.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 182: Symposium C – Polysilicon Thin Films and Interfaces , 1990, 247
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

[1] Sze, S.M. (editor), VLSI Technology pp. 99–106, McGraw-Hill, Singapore, 1985 Google Scholar
[2] Ohzone, T., Fukumoto, M., Fuse, G., Shinohara, A., Odanaka, S. and Sasago, M., IEEE Trans. Electron Devices, ED–32 No.9, pp.1749–1756, Sept. 1985 10.1109/T-ED.1985.22191Google Scholar
[3] Ohzone, T., Hirao, T., Horiuchi, S. and Hozumi, H., Trans. IECE Japan, Vol.E 63, pp.803–806, Nov. 1980 Google Scholar
[4] Okada, K., Aomura, K., Nakamura, T. and Shiba, H., IEEE J. Solid State Circuits, Vol.SC 14 pp.307–311 (1979)Google Scholar
[5] Becker, F.S., Oppohzer, H., Weitzel, I., Eichermiuller, H. and Schaber, H., J.Appl.Phys.,56, p. 1233 (1984)10.1063/1.334057Google Scholar
[6] Lu, N.C.C., Gerzberg, L., Meindl, J.D., IEEE Electron Device Lett., EDL–1 38 (1980)10.1109/EDL.1980.25222Google Scholar
[7] Zellama, K., Germain, P., Squelard, S., Bourgoin, J.C. and Thomas, P.A., J. Appl. Phys.,50, p. 6995 (1979)10.1063/1.325856Google Scholar
[8] Squelard, S., Zellama, K., Germain, P. and Bourdon, B., Rev. Phys. Appl., 16 657 (1981)10.1051/rphysap:019810016012065700Google Scholar
[9] Bisaro, R., Magarino, J., Zellama, K, Squelard, S., Germain, P. and Morhange, J.F., Phys. Rev. B, 31, p. 3568 (1985)10.1103/PhysRevB.31.3568Google Scholar
[10] Bisaro, R., Proust, N., Magarino, J. and Zellama, K., Thin Solid Films 124 p. 171 (1985)10.1016/0040-6090(85)90260-3Google Scholar
[11] Bertagnolli, E. and Kabza, H., European Patent Application GR 89E1235 DE (1st March 1989)Google Scholar
[12] Haisma, J., ESSDERC '88, Journal de Physique, 49. C4, pp. 3–12 (1988)Google Scholar
[13] Götzlich, J., in Novel Silicon Based Technologies edited by Levy, R. (Kluwer Academic Publishers, Dordrecht, The Netherlands, 1989)Google Scholar
[14] Kunii, Y. and Sakakibara, Y., Jap. J. Appl. Physics 26 (11) pp. 1816–1822 (1987)10.1143/JJAP.26.1816Google Scholar
[15] Goto, H. and Inayoshi, K., in Ultra-Fast Silicon Bipolar Technology edited by Treitinger, L. and Miura-Mattausch, M. (Springer Verlag, 1988)Google Scholar
[16] Haken, R.A., Havemann, R.H., Eklund, R.H. and Hutter, L.N., in BICMOS Technology and Applications, edited by Alvarez, A.R. (Kluwer Academic Publishers, Dordrecht, 1989), p. 72 Google Scholar
[17] Rung, R., Momose, H. and Nagakubo, Y., IEDM 82 Digest of Tech. Papers, pp. 237–240 (1982)Google Scholar
[18] Matsunaga, J. et al. , IEDM 80 Digest of Tech Papers, p. 565 (1980)Google Scholar
[19] Kùsters, K.H., Enders, G., Meyberg, W., Hasler, B., Higelin, G., Röhl, S., Mühlhoff, H.M. and Müller, W., 1987 Symp.on VLSI Techn., Digest of tech. papers, pp. 93–94 (1987)Google Scholar
[20] Honlein, W. and Reisinger, H., Appl. Surf. Sci. 39 (1989) 178–191 10.1016/0169-4332(89)90432-7Google Scholar
[21] Spitzer, A. and Baunach, R., Appl. Surf. Sci. 39 (1989) 192–199 10.1016/0169-4332(89)90433-9Google Scholar
[22] Küsters, K.H., DoThanh, L., Stelz, F.X., Kellner, W.-U., Milhoff, H.-M. and Müller, W., ESSDERC '89, Conf. Proc., pp. 907–910 (1989)10.1007/978-3-642-52314-4_188Google Scholar
[23] Nakajima, S., Miura, K., Minegishi, K and Morie, T., IEDM 84 Digest of Tech. Papers, pp. 240–243 (1984)Google Scholar
[24] Inoue, S., Hieda, K., Nitayama, A., Horiguchi, F. and Masuoka, F., IEDM 89 Digest of Tech. Papers, pp. 31–34 (1989)Google Scholar
[25] Mulder, J.G.M., Eppenga, P., Hendriks, M. and Tong, J.E., J. Electrochem. Soc., 137 No. 1,pp. 273–279 (1990)10.1149/1.2086381Google Scholar
[26] Tang, T.E., IEDM 89 Digest of Techn. Papers, pp. 39–42 (1989)Google Scholar
[27] Sawada, K., Yamamoto, H., Ogawa, H., Yano, K. and Fujita, T, 1989 Symp. on VLSI Techn., Digest of Techn. Papers, pp. 41–42 (1989)Google Scholar
[28] Alperin, M.E., Hollaway, T.C., Haken, R.A., Gosmeyer, C.D., Karnaugh, R.V. and Parmantie, W.D., IEEE Trans. Electron Devices, ED 32 No. 2, pp. 141–149 (1985)10.1109/T-ED.1985.21923Google Scholar
[29] Neppl, F. and Pfleiderer, H.-J., ESSDERC '88, Journal de Physique, 49,C4, pp. 13–22 (1988)Google Scholar
[30] Nakahara, M., Hiruta, Y., Noguchi, T., Yoshida, M., Maeguchi, K. and Kanzaki, K., Techn. Digest IEDM 85, pp. 238–241 (1985)Google Scholar
[31] Parrillo, L.C., Hillenius, S.J., Field, R.L., Hu, E.L., Fichtner, W. and Chen, M-L., Techn. Digest IEDM 84, pp. 418–421 (1984)Google Scholar
[32] Sun, J.Y.-C., Wong, C., Taur, Y. and Hsu, C.-H., 1989 Symp. on VLSI Techn., Digest of Tech. papers pp. 17–19 (1989)Google Scholar
[33] Manchanda, L., Conf. Proc. IEEE/IRPS, p. 183 (1986)Google Scholar
[34] Hiruta, Y., Matsuoka, F., Hama, K., Iwai, H., Maeguchi, K- and Kanzaki, K., Techn. Digest IEDM 87, pp. 578–581 (1987)Google Scholar
[35] Takato, H., Sunouchi, K., Okabe, N., Nitayama, A., Hieda, K., Horiguchi, F. and Masuoka, F., IEDM 88 Digest of Tech. Papers, pp. 222–225 (1988)Google Scholar
[36] Sunouchi, K., Takato, H., Okabe, N., Yamada, T., Ozaki, T., Inoue, S., Hashimoto, K., Hieda, K, Nitayama, A., Horiguchi, F. and Masuoka, F., IEDM 89 Digest of Tech. Papers, pp. 211–214 (1989)Google Scholar
[37] Wieder, A.W., IEDM 86 Digest of Tech. Papers, pp. 8–11 (1986)Google Scholar
[38] Schaber, H., Criegern, R. v. and Weitzel, I., J. Appl. Phys. 58 (11), pp. 4036–4042 (1985)Google Scholar
[39] Ning, T.H., Isaac, R.D., Solomon, P.M., Tang, D.D., Yu, H.-N., Feth, G.C. and Wiedmann, S.K., IEEE Trans. on Electron Devices ED–28, p. 1010 (1981)10.1109/T-ED.1981.20476Google Scholar
[40] Ning, T.H. and Isaac, R.D., IEEE Trans. on Electron Devices ED–27 p. 2051 (1980)Google Scholar
[41] Graul, J., Glasl, A. and Murrmann, H., IEEE J. SCll, p. 491 (1976)Google Scholar
[42] Graaf, H.C. de and Groot, J.G. de, IEEE Trans. on Electron Devices ED 26 p. 1771 (1979)Google Scholar
[43] Ng, C.C. and Yang, E.S., IEDM 86 Digest of Tech. Papers, pp. 32–35 (1986)Google Scholar
[44] Wong, C.Y., Grovenor, C.R.M., Batson, P.E. and Smith, D.A., J. Appl. Phys. 57, p. 438 (1985)Google Scholar
[45] Böhm, H.J., Kabza, H., Meister, T.F. and Wendt, H., Proc. 1st Int. Symp. on ULSI Science and Techn., Philadelphia, May 1987, pp. 347–357 (1987)Google Scholar
[46] Schaber, H., Bieger, J., Meister, T.F., Ehinger, K and Kakoschke, R., IEDM 87 Digest of Tech. Papers, pp. 170–173 (1987)Google Scholar
[47] Schaber, H. and Meister, T.F., Proc. of the 1989 BCTM, IEEE cat. no. 89 CH 2771-4, pp. 75–81 (1989)Google Scholar
[48] Meister, T.F., Ehinger, I.C, Kabza, H., Fruth, C., Schreiter, R. and Biebl, M., Proc. of The 1989 BCTM, IEEE cat. no. 89 CH 2771-4, pp. 86–89 (1989)Google Scholar
[49] Wong, S.S., Chen, D.C., Merchant, P., Cass, T.R., Amano, J. and Chin, K.Y., IEEE Trans. Electron Devices ED–34 pp. 587–591 (1987)Google Scholar
[50] Kabza, H., Reisch, M., Probst, V., Böhm, W., Fertsch, J., Schaber, H. and Eggers, H., ESSDERC '87, Conf. Proc., pp. 1047–1050 (1987)Google Scholar
[51] Probst, V., Schaber, H., Lippens, P., Hove, L. Van den and Keersmaecker, R. De, Appl. Phys. Lett., 52 (21), p. 1803 (1988)10.1063/1.99723Google Scholar
[52] Probst, V., Kabza, H. and Goebel, H., ESSDERC 88, Journal de Physique, 49, C4, pp. 175–178 (1988)Google Scholar
[53] Pitt, M.G., Jonkers, A.G.M., Pomp, H.G. and Werdt, R. de, ESSDERC '89, Conf. Proc., pp. 903–906 (1989)10.1007/978-3-642-52314-4_187Google Scholar
[54] Shone, F.C., Hansen, S.E., Kao, D.B., Saraswat, K.C. and Plummer, J.D., IEDM 86 Digest of Tech. Papers, pp. 534–537 (1986)Google Scholar