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Applications of Amorphous Ti-P-N Diffusion Barriers in Silicon Metallization

Published online by Cambridge University Press:  25 February 2011

E. Kolawa,
L. Halperin,
P. Pokela,
Quat T Vu and
C. W. Nieh
E. Kolawa
Affiliation:
California Institute of Technology, 116–81, Pasadena CA 91125
L. Halperin
Affiliation:
California Institute of Technology, 116–81, Pasadena CA 91125
P. Pokela
Affiliation:
California Institute of Technology, 116–81, Pasadena CA 91125
Quat T Vu
Affiliation:
California Institute of Technology, 116–81, Pasadena CA 91125
C. W. Nieh
Affiliation:
California Institute of Technology, 116–81, Pasadena CA 91125
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Abstract

Thin films of amorphous TiP and TiPN2 alloys were deposited by sputtering of a TiP target in an Ar and N2/Ar mixture, respectively. These alloy films were tested as diffusion barriers between Al and Si as well as between Cu and Si and also in metallizations which included TiSi2 as the contacting layer. Rutherford backscattering spectrometry, x-ray diffraction and electrical measurements were used to determine the barrier effectiveness. We find that TiP and TiPN2 films prevent the interdiffusion and reaction between Al and Si up to 500°C and 600°C for 30 minutes annealing, respectively, and between Cu and Si up to 600°C and 700°C, respectively.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 181: Symposium B – Advanced Metallizations in Microelectronics , 1990, 33
Copyright
Copyright © Materials Research Society 1990

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