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Applications of Energy Beams in Material and Device Processing

Published online by Cambridge University Press:  22 February 2011

G.J. Galvin,
L.S. Hung,
J.W. Mayer and
M. Nastasi
G.J. Galvin
Affiliation:
Dept. of Materials Science and Engineering Cornell University, Ithaca, New York 14853
L.S. Hung
Affiliation:
Dept. of Materials Science and Engineering Cornell University, Ithaca, New York 14853
J.W. Mayer
Affiliation:
Dept. of Materials Science and Engineering Cornell University, Ithaca, New York 14853
M. Nastasi
Affiliation:
Dept. of Materials Science and Engineering Cornell University, Ithaca, New York 14853
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Abstract

Energetic ion beams used outside the traditional role of ion implantation are considered for semiconductor applications involving interface modification for self-aligned silicide contacts, composition modification for formation of buried oxide layers in Si on insulator structures and reduced disorder in high energy ion beam annealing for buried collectors in transistor fabrication. In metals, aside from their use in modification of the composition of near surface regions, energetic ion beams are being investigated for structural modification in crystalline to amorphous transitions. Pulsed beams of photons and electrons are used as directed energy sources in rapid solidification. Here, we consider the role of temperature gradients and impurities in epitaxial growth of silicon.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 23 , 1983, 25
Copyright
Copyright © Materials Research Society 1984

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References

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