Hostname: page-component-7b7567c8c-7pwfn Total loading time: 0 Render date: 2026-11-14T17:01:08.253Z Has data issue: false hasContentIssue false

Artificial Semiconductor Superlattices

Published online by Cambridge University Press:  21 February 2011

G.H. Döhler*
Affiliation:
Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1,7000 Stuttgart 80, F.R.G.
Get access

Extract

Artificial superlattices are multilayer structures consisting of a onedimensional sequence of ultrathin layers of different semiconductors (compositional or hetero junction superlattices) or layers of the same material, modulated by periodic n- and p-doping (doping or p-n junction superlattices). The electronic properties of these new materials differ qualitatively from those of their components and can be tailored within wide limits by appropriate choice of the design parameters (i.e. superlattice period, alloy composition, and/or doping concentration). Different electronic phases (insulating, semiconducting, semimetallic, metallic, e.g.) may be obtained in this way.

Information

Type
Research Article
Copyright
Copyright © Materials Research Society 1984

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable