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a-Si MOS Fet with Native-Oxide Gate Grown by Normal-Pressure and Low-Temperature Thermal-Oxidation Method

Published online by Cambridge University Press:  26 February 2011

Hong-Yong Zhang and
Masakiyo Matsumura
Hong-Yong Zhang
Affiliation:
Dept. of Electrical and Electronic Engineering, Tokyo Institute of Technology, Oh-okayama, Meguro-ku, Tokyo 152, JAPAN
Masakiyo Matsumura
Affiliation:
Dept. of Electrical and Electronic Engineering, Tokyo Institute of Technology, Oh-okayama, Meguro-ku, Tokyo 152, JAPAN
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Abstract

Native silicon-dioxide film has been grown thermally under normalpressure and low-temperature conditions, and applied to a gate insulator of amorphous-silicon thin-film transistors. Th highest field-effect mobility under room-temperature conditions was 0.7cm2/Vs. Temperature dependence of the transistor characteristics has also been studied. The transistor has been operated in a wide temperature range from -196 °C to more than 200°C with satisfactorily stable manner. Characteristic temperature of the localized state density distribution has been estimated to be about 20° C.

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References

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