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Atomic Force Microscopy Study of GaN-Buffer Layers on SiC(0001) By MOCVD

Published online by Cambridge University Press:  15 February 2011

Dongsup Lim,
Dongjin Byun,
Gyeungho Kim,
Ok-Hyun Nam,
In-Hoon Choi,
Dalkeun Park and
Dong-Wha Kum
Dongsup Lim
Affiliation:
Korea University, Department of Materials Science and Engineering, Seoul, Korea.
Dongjin Byun
Affiliation:
KIST, Division of Metals, Seoul, Korea.
Gyeungho Kim
Affiliation:
KIST, Division of Metals, Seoul, Korea.
Ok-Hyun Nam
Affiliation:
KIST, Division of Metals, Seoul, Korea.
In-Hoon Choi
Affiliation:
Korea University, Department of Materials Science and Engineering, Seoul, Korea.
Dalkeun Park
Affiliation:
KIST, Division of Chemical Engineering, Seoul, Korea.
Dong-Wha Kum
Affiliation:
KIST, Division of Metals, Seoul, Korea.
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Abstract

Buffer layers promote lateral growth of films due to a decrease in interfacial free energy between the film and substrate, and large 2-dimensional nucleation. Smooth surfaces of thebuffer layers are desired. Optimum conditions for GaN-buffer growth on the vicinal surface of 6H-SiC(0001) were determined by atomic force microscope (AFM). AFM analysis of the GaN nucleation layers led to an optimum growth conditions of the GaN-buffer layer which was confirmed by cross-sectional transmission electron microscopy, Hall measurements and photoluminescence spectra. Optimum growth conditions for GaN-buffer layer on SiC(0001) was determined to be 1 minute growing at 550°C.

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