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Atomic Hydrogen Passivation of High Energy Hydrogen Implants

Published online by Cambridge University Press:  16 February 2011

K. Srikanth,
J. Shenal and
S. Ashok
K. Srikanth
Affiliation:
Center for Electronic Materials and Processing, Department of Engineering Science, Pennsylvania State University, University Park, PA 16802.
J. Shenal
Affiliation:
Center for Electronic Materials and Processing, Department of Engineering Science, Pennsylvania State University, University Park, PA 16802.
S. Ashok
Affiliation:
Center for Electronic Materials and Processing, Department of Engineering Science, Pennsylvania State University, University Park, PA 16802.
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Abstract

High-energy hydrogen ion (proton) implantation is used in Si for creating defects, while low-energy H is known for passivation of a variety of defects and impurities. We have carried out a study of low-energy (<0.4 keV) H passivation of defects produced by 100 keV H implantation. Both Schottky barrier transport and deep level transient spectroscopy measurements give evidence for self-passivation of defects produced by H.

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