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Atomic Interdiffusion in Amorphous Silicon and Germanium

Published online by Cambridge University Press:  26 February 2011

P. D. Persans and
A. F. Ruppert
P. D. Persans
Affiliation:
Exxon Research and Engineering Co. Annandale, NJ 08801
A. F. Ruppert
Affiliation:
Exxon Research and Engineering Co. Annandale, NJ 08801
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Abstract

We present measurements of interdiffusion in amorphous silicon/amorphous germanium compositional multilayer structures using Raman scattering and optical absorption spectroscopies. We find that interdiffusion coefficient D* can be described by D* = Do exp (−ED/kT) with ED = 3.3 eV and Do = 104 cm2s−1. The high value of ED suggests that the diffusion process is substitutional.

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