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Atomic Interdiffusion in Au/Amorphous Ni-Nb/Semiconductor Systems

Published online by Cambridge University Press:  15 February 2011

B. L. Doyle,
P. S. Peercy,
R. E. Thomas,
J. H. Perepezko and
J. D. Wiley
B. L. Doyle
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185, (U.S.A.)
P. S. Peercy
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185, (U.S.A.)
R. E. Thomas
Affiliation:
University of Wisconsin, Madison, W153706, (U.S.A.)
J. H. Perepezko
Affiliation:
University of Wisconsin, Madison, W153706, (U.S.A.)
J. D. Wiley
Affiliation:
University of Wisconsin, Madison, W153706, (U.S.A.)
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Abstract

Backscattering measurements were performed to assess the stability of amorphous Ni-Nb for contacts of high temperature electronics. The interdiffusion of amorphous Ni-Nb and three semiconductors—silicon, GaAs and GaP—was measured to study the stability for primary metallization applications. Diffusion of gold with amorphous Ni-Nb and the same three semiconductors was also investigated in order to address diffusion barrier applications of amorphous metals. The results indicate that the use of amorphous Ni-Nb as a contact or a diffusion barrier could extend the useful operation temperature range for GaP devices to above 550°C.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 18: Symposium C – Interfaces and Contacts , 1982, 69
Copyright
Copyright © Materials Research Society 1982

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References

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