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Atomic Processes in Silicon Hetero-Epitaxy

Published online by Cambridge University Press:  25 February 2011

J.A. Venables,
J.S. Drucker and
G. Raynerd
J.A. Venables
Affiliation:
Department of Physics and Astronomy, Arizona State University, Tempe AZ 85287School of Maps, University of Sussex, Brighton BN 1 9QH, England
J.S. Drucker
Affiliation:
Department of Physics and Astronomy, Arizona State University, Tempe AZ 85287
G. Raynerd
Affiliation:
School of Maps, University of Sussex, Brighton BN 1 9QH, England
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Abstract

The growth of metals and semiconductors on reconstructed semiconductor surfaces proceeds through a number of conceptually distinct stages. These include: 1) the growth of the first layer or layers, which may have different reconstructions as growth proceeds; 2) the growth of (2D or 3D) islands of the deposit, and/or by step flow; 3) coalescence and/or coarsening of islands and/or the introduction of defects such as dislocations. Of particular interest are cases when the different ‘stages’ are in competition with each other, i.e. they constitute alternative sinks for (and sources of) arriving and migrating adatoms. The development of rate equations to describe such situations, and extract relevant atomic parameters, is outlined. Experimental examples are taken from recent work on Ag and Ge deposits on Si( 111) and (100) surfaces.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 263: Symposium F – Mechanisms of Heteroepitaxial Growth , 1992, 3
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

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