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Atomic Resolution Electronic Structure Using Spatially Resolved Electron Energy Loss Spectroscopy

Published online by Cambridge University Press:  21 February 2011

P.E. Batson
P.E. Batson*
Affiliation:
IBM Thomas J. Watson Research Center, Yorktown Heights, New York, 10598
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Abstract

Electronic structure in small areas is obtainable by inspection of near edge fine structure of core excitations. We can accomplish this today with near atomic resolution, using EELS at high energy. At IBM, we have obtained results using a sub-0.2nm probe at 120KeV with enough current to allow 200meV resolution studies at the Si L2,3 edge. It is especially crucial for Si-based structures that this allows us to obtain Z-contrast dark field images of the Si lattice at an acceleration voltage that is low enough to minimize radiation damage, but with a high enough current to allow good quality spectra to be obtained. A review of instrumental requirements, spectral interpretation, and applications to Si-Ge alloys is presented.

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