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Atomistic Mechanisms of Dislocation Mobility in Silicon

Published online by Cambridge University Press:  15 February 2011

J. F. Justo,
V. V. Bulatov and
S. Yip
J. F. Justo
Affiliation:
Department of Nuclear Engineering, MIT, Cambridge, MA 02139
V. V. Bulatov
Affiliation:
Department of Mechanical Engineering, MIT, Cambridge, MA 02139
S. Yip
Affiliation:
Department of Nuclear Engineering, MIT, Cambridge, MA 02139
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Abstract

We study the leading mechanisms of kink mobility of 30° and 90°-partial dislocations in the glide set {111} of silicon. The calculations are performed using a new empirical potential for Si, which has been shown to give an accurate description of core properties of partial dislocations [1], to study mechanisms of kink formation and migration. In the case of 30°-partial dislocation, two kinds of kinks are identified, left and right, which have different structures, formation energies, and mobilities.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 469: Symposium E – Defects and Diffusion in Silicon Processing , 1997, 505
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

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