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Atomistic Simulation of Silicon Grain Boundaries*

Published online by Cambridge University Press:  26 February 2011

S. R. Phillpot and
D. Wolf
S. R. Phillpot
Affiliation:
Materials Science Division, Argonne National Laboratory, Argonne IL 60439
D. Wolf
Affiliation:
Materials Science Division, Argonne National Laboratory, Argonne IL 60439
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Abstract

The bond-bending and bond-stretching three-body potential of Stillinger and Weber is used to study the energy and structure of grain boundaries in silicon.

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Footnotes

*

Work supported by the U.S. Department of Energy, BES-Materials Sciences, under Contract W-31-109-Eng-38.

References

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