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Band offsets at the ZnSe / CuInS2 interface

Published online by Cambridge University Press:  01 February 2011

O. Papathanasiou,
S. Siebentritt,
I. Lauermann,
T. Hahn,
H. Metzner and
M. Ch. Lux-Steiner
S. Siebentritt
Affiliation:
Hahn-Meitner-Institut, Glienicker Str. 100, D-14109 Berlin, Germany
I. Lauermann
Affiliation:
Hahn-Meitner-Institut, Glienicker Str. 100, D-14109 Berlin, Germany
T. Hahn
Affiliation:
Friedrich-Schiller-Universität Jena, Institut für Festkörperphysik, Max-Wien-Platz 1, D-07743 Jena, Germany
H. Metzner
Affiliation:
Friedrich-Schiller-Universität Jena, Institut für Festkörperphysik, Max-Wien-Platz 1, D-07743 Jena, Germany
M. Ch. Lux-Steiner
Affiliation:
Hahn-Meitner-Institut, Glienicker Str. 100, D-14109 Berlin, GermanyFreie Universität Berlin, Arnimallee 14, 14195 Berlin, Germany
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Abstract

ZnSe has been shown to be a promising alternative buffer in CuInS2 thin film solar cells. Here we present for the first time photoemission measurements to determine the band alignment at the ZnSe/CuInS2 interface. Epitaxial CuInS2 is used as a substrate. ZnSe is deposited in varying thicknesses by MOCVD. X-ray photoelectron spectra are measured with an Mg laboratory source and with synchrotron radiation. A valence band offset of 0.4+/-0.1eV is obtained.

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References

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