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Band-Structure Engineering in Novel Optoelectronic Devices

Published online by Cambridge University Press:  10 February 2011

H. Shen and
M. Dutta
H. Shen
Affiliation:
U. S. Army Research Laboratory, Physical Science Directorate AMSRL-PS-PB, Fort Monmouth, New Jersey, 07703–5601
M. Dutta
Affiliation:
U. S. Army Research Laboratory, Physical Science Directorate AMSRL-PS-PB, Fort Monmouth, New Jersey, 07703–5601
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Abstract

In this paper we show that unconventionally strained semiconductor heterostructures with unusual band structure exhibit novel and desirable electronic and optical properties not seen in the conventional strained materials. In addition to improving the performance of existing components, unconventional strain may be used to achieve greater functionality in novel optoelectronic devices. We give as examples three such devices that we have conceived and demonstrated, in the two areas of strain, lattice mismatch induced and thermal expansion coefficient mismatch induced. The higher performance and functionality in these devices demonstrate that strain engineered heterostructures are a very promising area for device research and development.

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