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The Behavior of Ion-Implanted Hydrogen in Gallium Nitride

Published online by Cambridge University Press:  15 February 2011

S. M. Myers,
T.J. Headley,
C.R. Hills,
J. Han,
G.A. Petersen,
C.H. Seager and
W.R. Wampler
S. M. Myers
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185-1056, smmyers@sandia.gov
T.J. Headley
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185-1056, smmyers@sandia.gov
C.R. Hills
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185-1056, smmyers@sandia.gov
J. Han
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185-1056, smmyers@sandia.gov
G.A. Petersen
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185-1056, smmyers@sandia.gov
C.H. Seager
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185-1056, smmyers@sandia.gov
W.R. Wampler
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185-1056, smmyers@sandia.gov
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Abstract

Hydrogen was ion-implanted into wurtzite-phase GaN, and its transport, bound states, and microstructural effects during annealing up to 980°C were investigated by nuclear-reaction profiling, ion-channeling analysis, transmission electron microscopy, and infrared (IR) vibrational spectroscopy. At implanted concentrations vl at.%, faceted H 2 bubbles formed, enabling identification of energetically preferred surfaces, examination of passivating N-H states on these surfaces, and determination of the diffusivity-solubility product of the H. Additionally, the formation and evolution of point and extended defects arising from implantation and bubble formation were characterized. At implanted H concentrations ^0.1 at.%, bubble formation was not observed, and ion-channeling analysis indicated a defect-related H site located within the [0001] channel.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 537: Symposium G – GaN and Related Alloys , 1998, G5.8
Copyright
Copyright © Materials Research Society 1999

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