Hostname: page-component-7b7567c8c-lpg2g Total loading time: 0 Render date: 2026-11-15T20:38:48.208Z Has data issue: false hasContentIssue false
  • English
  • Français

Boltzmann Transport Equation Simulation of Semiconductor Interfacial Heat Transfer Based on Input from the Atomistic Green�s Function Method

Published online by Cambridge University Press:  31 January 2011

Zhen Huang,
Dhruv Singh,
Jayathi Murthy and
Timothy Fisher
Zhen Huang
Affiliation:
huang87@purdue.edu, Purdue University, School of Mechanical Engineering and Birck Nanotechnology Center, West Lafayette, Indiana, United States
Dhruv Singh
Affiliation:
Singh36@purdue.edu, Purdue University, School of Mechanical Engineering and Birck Nanotechnology Center, West Lafayette, Indiana, United States
Jayathi Murthy
Affiliation:
jmurthy@ecn.purdue.edu, Purdue University, School of Mechanical Engineering and Birck Nanotechnology Center, West Lafayette, Indiana, United States
Timothy Fisher
Affiliation:
tsfisher@purdue.edu, Purdue University, School of Mechanical Engineering and Birck Nanotechnology Center, West Lafayette, Indiana, United States
Get access

Abstract

The Boltzmann transport equation (BTE) had been successfully used to predict phonon transport in semiconductors including silicon and germanium. However, in a composite system, the method requires external inputs to include accurate boundary conditions at internal interfaces. The atomistic Green's function (AGF) method is particularly useful for addressing interfacial heat transfer problems. In this paper, phonon transmission functions derived using the AGF method are incorporated in a non-gray BTE calculation of phonon transport in a relaxation time approximation. A Landauer-type heat flux is computed at the interface using the transmission function and the lattice temperatures on either side of the interface to compute distribution functions. The formulation is applied to a Si/Ge interface and the dependence of the effective thermal conductivity of the composite medium is investigated as a function of domain length.

Keywords

semiconductingthermal conductivitycomposite

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

1 Majumdar, A. ASME Journal of Heat Transfer Transfer, 115, 7, (1993).Google Scholar
2 Banoo, K. PhD Thes Thesis, Purdue University (2000)Google Scholar
3 Ni, C. and Murthy, J. IEEE ITherm, Paper No. 4544382 (2008).Google Scholar
4 Sverdrup, P. PhD Thesis, Stanford University, (2000 2000).Google Scholar
5 Narumanchi, S. Murthy, J. and Amon, C. ASME Journal of Heat Transfer Transfer, 126, 946, (2004).Google Scholar
6 Klemens, P. Solid State Physics, ed., Seitz, F. and Thrunbull, D. (1958) 7, pp. 1–98.Google Scholar
7 Zhang, W. Mingo, N. and Fisher, T.S. ASME Journal of Heat Transfer, 129(4), 483, (2007).Google Scholar
8 Glassbrenner, C. and Slack, G. Physical Review, 134, 4A, (1964).Google Scholar
9 Holland, M. Physical Review, 132, 6, (1963).Google Scholar
10 Murthy, J. Narumanchi, S. Pascual-Gutierrez, J., Wang, T. Ni, C. and Mathur, S. International Journal for Multiscale Computational Engineering, 3, 5 (2005).Google Scholar