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Boron Diffusion Coefficient in Diamond

Published online by Cambridge University Press:  10 February 2011

T. Sung ,
G. Popovici ,
M. A. Prelas  and
R. G. Wilson
T. Sung
Affiliation:
Nuclear Engineering Dept. University of Missouri-Columbia, MO 65211
G. Popovici
Affiliation:
Nuclear Engineering Dept. University of Missouri-Columbia, MO 65211
M. A. Prelas
Affiliation:
Nuclear Engineering Dept. University of Missouri-Columbia, MO 65211
R. G. Wilson
Affiliation:
Hughes Research Laboratories, Malibu, CA 90265
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Abstract

A study of boron diffusion into diamond lattice was performed. Diffusion was made in hydrogen atmosphere at 30 torr. Two type IIa diamonds were heated at 1200 and 1400 °C for 20 hours and 5 minutes, respectively. Boron powder was used as a dopant source. The boron concentration profiles of both samples were measured by secondary ion mass spectrometry. Based on Fick's law, the diffusion coefficients were computed.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 416: Symposium DD – Diamond for Electronic Applications , 1995 , 467
Copyright
Copyright © Materials Research Society 1996

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References

REFERENCES

1. Popovici, G., Sung, T., Prelas, M. A. and Wilson, R.G, Application of Diamond Films and Related Materials: Third international Conference, edited by Feldman, A., Tzeng, Y., Yarbrough, W. A., Yoshikawa, M., and Murkawa, M., pp. 169–172 (1995)Google Scholar
2. Popovici, G., Sung, T., Prelas, M. A. and Wilson, R. G., Electrochemical Soc. Proc. V. 95–4, pp. 297–302 (1995).Google Scholar
3. Popovici, G., Wilson, R. G., Sung, T., Prelas, M. A. and Khasawinah, S., J. Appl. Phys. 77(10), pp. 5103–5106 (1995).Google Scholar
4. Narducci, D. and Cuomo, J. J., J. Appl. Phys. 63, 1184 (1990).Google Scholar
5. Tsai, , Delfino, M., Ching, L-Y., Reynolds, G., Hodul, D. and IIICooper, C. B., New Diamond Science and Technology MRS Int. Conf. Proc., edited by Messier, R., Glass, J. T., Butler, J. E., Roy, R., pp. 937–941 (1991)Google Scholar
6. Boltaks, B. I. Difflusion in Semiconductors (Acad. Press, New York 1963), pp. 104–118.Google Scholar
7. Kajihara, S. A., Antonelli, A. and Bernholc, J., Phisica B, 185, pp. 144–149 (1993).Google Scholar
8. Bemholc, J., Kajihara, S. A., Wang, C., Antonlli, A. and Davis, R. F., Material Science and Engeering, B 11, pp. 265–272 (1992).Google Scholar
9. Chrenko, R. M., Tuft, R. E., and Strong, H. M., Nature(London) 270, pp. 141 (1977).Google Scholar