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Boron Doping of Silicon Using Excimer Lasers

Published online by Cambridge University Press:  25 February 2011

A. Slaoui,
F. Foulon,
M. Bianconi,
L. Correra,
R. Nipoti,
R. Stuck,
S. Unamuno,
E. Fogarassy and
S. Nicoletyi
A. Slaoui
Affiliation:
CRN (IN2P3), Laboratoire PHASE (ER du CNRS n° 292), 23 rue du LOESS, F-67037 STRASBOURG CEDEX (France)
F. Foulon
Affiliation:
CRN (IN2P3), Laboratoire PHASE (ER du CNRS n° 292), 23 rue du LOESS, F-67037 STRASBOURG CEDEX (France)
M. Bianconi
Affiliation:
CNR-LAMEL, Via Castagnoli 1, I-40126 BOLOGNA (Italy)
L. Correra
Affiliation:
CNR-LAMEL, Via Castagnoli 1, I-40126 BOLOGNA (Italy)
R. Nipoti
Affiliation:
CNR-LAMEL, Via Castagnoli 1, I-40126 BOLOGNA (Italy)
R. Stuck
Affiliation:
CRN (IN2P3), Laboratoire PHASE (ER du CNRS n° 292), 23 rue du LOESS, F-67037 STRASBOURG CEDEX (France)
S. Unamuno
Affiliation:
CRN (IN2P3), Laboratoire PHASE (ER du CNRS n° 292), 23 rue du LOESS, F-67037 STRASBOURG CEDEX (France)
E. Fogarassy
Affiliation:
CRN (IN2P3), Laboratoire PHASE (ER du CNRS n° 292), 23 rue du LOESS, F-67037 STRASBOURG CEDEX (France)
S. Nicoletyi
Affiliation:
CNR-LAMEL, Via Castagnoli 1, I-40126 BOLOGNA (Italy)
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Abstract

The use of lasers in the doping of semiconductors has been investigated extensively these last years both for photovoltaic and microelectronic applications. In this work, doping of single-crystal silicon in BCl3 ambients using a pulsed UV laser has been studied as a function of laser wavelength and fluence in order to investigate the effects of photochemical decomposition of the BCl3 gas and the effects of thermal decomposition of adsorbed layers on the doping process. Different parameters involved in the process (laser energy density, number of pulses per frame, BCl3 gas pressure) were investigated. The electrical characteristics of the doped layers were discussed.

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References

REFERENCES

1. Deutsch, T.F., Mat. Res. Soc. Sym. Proc. 12, 225 (1983); K.G. Ibbs and M.L. Lloyd, ibid., 17, 243 (1983).Google Scholar
2. Sigmon, T.W. in Photon. Beam. and Plasma Stimulated Chemical Processes at Surfaces, edited by Donnely, V.M., Herman, I.P., Hirose, M. (Mat. Res. Soc. Proc. 75, Pittsburg, 1987) pp. 619–623.Google Scholar
3. Bentini, G.G., Bianconi, M., and Matsumoto, S., Appl. Phys. A45, 317 (1988).Google Scholar
4. Kato, S., Nagahori, T., Matsumoto, S., J. Appl. Phys. 62, 3656 (1987).Google Scholar
5. Kato, S., Saeki, H., Wada, J., and Matsumoto, S., J. Electrochem. Soc. 153, 1030 (1988).Google Scholar
6. Correra, L., Bentini, G.G., Bianconi, M., Nipoti, R., and Patti, D.A., to be published in Appl. Surf. Sci. 36 (European Mat. Res. Soc. Symp., Strasbourg, 1988).CrossRefGoogle Scholar
7. Foulon, F., Slaoui, A., Fogarassy, E., Fuchs, C., and Siffert, P., ref. 6.Google Scholar
8. Maria, H.J., McDonald, J.R., and McGlynn, S.P., J. Am. Chem. Soc. 95, 1050 (1973).CrossRefGoogle Scholar
9. Slaoui, A., Foulon, F., Fuchs, C., Fogarassy, E., and Siffert, P., submitted to J. Chem. Phys.Google Scholar
10. Slaoui, A, Fogarassy, E., and Siffert, P. in Springer Ser. Chem. Phys. on Laser Processing and Diagnostics, edited Bauerle, D. (Springer Verlag, 39, Heidelberg, 1984) pp. 65–69.Google Scholar
11. Fogarassy, E.P., Lowdnes, D.H., Narayan, J., and White, C.W., J. Appl. Phys. 58, 2167 (1985).Google Scholar
12. Unamuno, S., and Fogarassy, E., ref. 6.Google Scholar
13. Chen, C.J., J. Vac. Sci. Technol., A5, 3386 (1987).Google Scholar