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Boron Doping using Proximity Rapid Thermal Diffusion from Spin-on-Dopants

Published online by Cambridge University Press:  22 February 2011

M. Rastogi,
W. Zagozdzon-Wosik,
F. Romero-Borja,
J. M. Heddleson,
R. Beavers,
P. Grabiec and
L. T. Wood
M. Rastogi
Affiliation:
Electrical Engineering Department, University of Houston, Houston, TX
W. Zagozdzon-Wosik
Affiliation:
Electrical Engineering Department, University of Houston, Houston, TX
F. Romero-Borja
Affiliation:
Texas Center for Superconductivity and Physics Department
J. M. Heddleson
Affiliation:
Solid State Measurements Inc., Pittsburgh, PA
R. Beavers
Affiliation:
Texas Instruments, Material Characterization Laboratoiy Dallas, TX
P. Grabiec
Affiliation:
Institute of Electron Technology, Warsaw, Poland
L. T. Wood
Affiliation:
Texas Center for Superconductivity and Physics Department
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Abstract

Proximity rapid thermal diffusion (RTD) has been investigated as a doping technique for p-type boron doped junctions. The efficiency of RTD has been studied as a function of process variables (temperature, time, and ambient) and evaluated based on sheet resistance measurements, secondary ion mass spectroscopy (SIMS), spreading resistance (SR), and Fourier transmission infrared absorption (FTIR) in a spin-on-dopant source (SOD). The doping efficiency in source wafers is controlled by different mechanism than in processed wafers. Strong influence of dopant incorporation in the processed wafers on oxygen content in the diffusion ambient is observed especially at low diffusion temperatures.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 342: Symposium G – Rapid Thermal and Integrated Processing III , 1994, 369
Copyright
Copyright © Materials Research Society 1994

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References

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