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Boron Solubility Limits Following Low Temperature Solid Phase Epitaxial Regrowth

Published online by Cambridge University Press:  21 March 2011

C. D. Lindfors ,
K. S. Jones  and
M. J. Rendon
C. D. Lindfors
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611-6130, U. S. A.
K. S. Jones
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611-6130, U. S. A.
M. J. Rendon
Affiliation:
Semiconductor Products Sector, Motorola Inc. Austin, TX 44548, U. S. A.
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Abstract

The work described herein focuses on examining the effect of solid phase epitaxial regrowth (SPER) on boron implanted silicon. It is shown that boron levels within the silicon can greatly enhance or reduce the regrowth rate of the silicon. Electrical measurements show optimum sheet resistances for 5 keV, 2×1015 cm−2 implant conditions yielding sheet resistance values of ∼140 Ω/sq at 500 °C annealing to ∼120 Ω/sq at 650 °C. Results using Hall effect and four-point probe show lower doses of boron will become fully active but levels will drop significantly as dose is increased. Lastly, maximum active concentrations of boron appear to reach values of ∼3-4×1020 cm−3 for a boron dose of 1×1015 cm−2 after SPER. Lower SPER anneal temperatures or higher doses tend to activate less boron.

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References

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